One-kilobit cross-bar molecular memory circuits at 30-nm half-pitch fabricated by nanoimprint lithography
Source abstract
Abstract
We have developed a process to fabricate a cross-bar structure using UV-curable nanoimprint lithography with a UV-curable double-layer spin-on resist, metal lift off and Langmuir–Blodgett film deposition. This process allowed us to produce 1-kbit cross-bar memory circuits at 30-nm half-pitch on both top and bottom electrodes. Read, write, erase and cross talking were also investigated.
Source: openaire · Quality: candidate unverified · Source record ↗
Research context
OpenAlex topics: Nanofabrication and Lithography Techniques · Force Microscopy Techniques and Applications · Molecular Junctions and Nanostructures
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References (13)
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