journal article·1985-05

Point defects, diffusion processes, and swirl defect formation in silicon

T. Y. Tan, U. G�sele

Publisher page

Abstract

No abstract is available for this record. The assistant can identify its topic from the title, but cannot infer the study’s results.

Source: Not provided · Quality: missing

Research context

OpenAlex topics: Silicon and Solar Cell Technologies · Semiconductor materials and interfaces · Thin-Film Transistor Technologies

SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.

References (100+)

Show source-provided references
1. A. Seeger, K.P. Chik: Phys. Stat. Solidi29, 455 (1968)10.1002/pssb.19680290202 ↗
2. S.M. Hu: J. Appl. Phys.45, 1567 (1974)10.1063/1.1663459 ↗
3. W. Frank, U. Gösele, H. Mehrer, A. Seeger:Diffusion in Crystalline Solids, ed. by G. Murch and A.S. Nowick (Academic, New York 1984) p. 6310.1016/B978-0-12-522662-2.50007-8 ↗
4. S. Mizuo, H. Higuchi: Jap. J. Appl. Phys.20, 739 (1981)10.1143/JJAP.20.739 ↗
5. S. Mizuo, H. Higuchi: J. Electrochem. Soc.129, 2292 (1982)10.1149/1.2123496 ↗
6. S. Mizuo, H. Higuchi: J. Electrochem. Soc.130, 194 (1983)10.1149/1.2120127 ↗
7. D.A. Antoniadis, I. Moskowitz: J. Appl. Phys.53, 6788 (1982)10.1063/1.330067 ↗
8. S. Prussin: J. Appl. Phys.43, 2850 (1972)10.1063/1.1661605 ↗
9. E. Sirtl: InSemiconductor Silicon 1977, ed. by H.R. Huff and E. Sirtl (Electrochem. Soc., Princeton, NJ 1977) p. 4
10. D.A. Antoniadis: J. Electrochem. Soc.129, 1093 (1982)10.1149/1.2124034 ↗
11. T.Y. Tan, U. Gösele: Appl. Phys. Lett.40, 616 (1982)10.1063/1.93200 ↗
12. T.Y. Tan, U. Gösele, F. Morehead: Appl. Phys. A31, 97 (1983)10.1007/BF00616312 ↗
13. K. Taniguchi, K. Kurosawa, M. Kashiwagi: J. Electrochem. Soc.127, 2243 (1980)10.1149/1.2129384 ↗
14. U. Gösele, T.Y. Tan: InDefects in Semiconductors II, ed. by S. Mahajan and J.W. Corbett (North-Holland, New York 1983) p. 45
15. T.Y. Tan, U. Gösele: J. Appl. Phys.53, 4767 (1982)10.1063/1.331312 ↗
16. B. Leroy: J. Appl. Phys.50, 7996 (1979);53, 4779 (1982)10.1063/1.325984 ↗
17. H. Alexander, H. Eppenstein, H. Gottschalk, S. Wendler: J. Microscopy118, 1 (1980)10.1111/j.1365-2818.1980.tb00239.x ↗
18. U. Gösele, W. Frank: InDefects in Semiconductors, ed. by J. Narayan and T.Y. Tan (North-Holland, New York 1981) p. 333
19. I.R. Sanders, P.S. Dobson: Philos. Mag.20, 881 (1969)10.1080/14786436908228058 ↗
20. H. Hashimoto, H. Shibayama, H. Ishikawa:Fujitsu Scientific and Technical Journal (March 1977) p. 73
21. Y. Sugita, H. Shimizu, A. Yoshinaka, T. Aoshima: J. Vac. Sci. Techn.14, 44 (1977)10.1116/1.569260 ↗
22. W.-K. Wu, J. Washburn: J. Appl. Phys.48, 3742; 3747 (1977)10.1063/1.324292 ↗
23. H. Shimizu, A. Yoshinaka, S. Sugita: Jap. J. Appl. Phys.17, 747 (1978)10.1143/JJAP.17.747 ↗
24. L. Claeys, G.J., Declerck, R.J. van Overstraeten: Appl. Phys. Lett.35, 797 (1979)10.1063/1.90940 ↗
25. J.A Lambert, P.S. Dobson: Philos. Mag. A44, 1031 (1981)10.1080/01418618108235792 ↗
26. H.J. Queisser, P.G.G. Van Loon: J. Appl. Phys.35, 3066 (1964)10.1063/1.1713179 ↗
27. R. Conti, G. Corda, R. Mattecci, G. Ghezzi: J. Mat. Sci.10, 705 (1975)10.1007/BF00566580 ↗
28. S.P. Murarka, G. Quintana: J. Appl. Phys.48, 46 (1977)10.1063/1.323358 ↗
29. S.P. Murarka: Phys. Rev. B16, 2849 (1977)10.1103/PhysRevB.16.2849 ↗
30. S.M. Hu: Appl. Phys. Lett.27, 165 (1975)10.1063/1.88441 ↗
31. T.Y. Tan, B.J. Ginsberg: Appl. Phys. Lett.42, 448 (1983)10.1063/1.93966 ↗
32. S. Matsumoto, Y. Ishikawa, T. Niimi: J. Appl. Phys.54, 5049 (1983)10.1063/1.332776 ↗
33. R.B. Fair: InApplied Solid State Science, Suppl. 2,Silicon Integrated Circuits, Part B, ed. by D. Kahng (Academic, New York 1981) p. 1
34. E. Guerrero: Ph.D. Thesis, University of Vienna (1984)
35. D. Mathiot, J.C. Pfister: J. Appl. Phys.55, 3518 (1984)10.1063/1.332941 ↗
36. D.A. Antoniadis: InProcess and Device Simulation for MOS-VLSI Circuits, ed. by P. Antognetti, D.A. Antoniadis, R.W. Dutton, and W.G. Oldham (Martinus Nijhoff, Boston 1983) p. 110.1007/978-94-009-6842-4_1 ↗
37. S. Mizuo, H. Higuchi: Denki Kagaku (J. Jap. Electrochem. Soc.)50, 331 (1982)
38. S. Mizuo, H. Higuchi: Jap. J. Appl. Phys.21, 56 (1982)10.1143/JJAP.21.56 ↗
39. Y. Ishikawa, Y. Sakino, H. Tanaka, S. Matsumoto, T. Niimi: J. Electrochem. Soc.129, 644 (1982)10.1149/1.2123940 ↗
40. D. Shaw: Phys. Stat. Sol. (b)72, 11 (1975)10.1002/pssb.2220720102 ↗
41. S.M. Hu: InDiffusion in Semiconductors, ed. by D. Shaw (Plenum Press, London 1973) p. 217
42. R.B. Fair: InImpurity Doping Processes in Silicon, ed. by F.F.Y. Wang (North-Holland, New York 1981) p. 31510.1016/B978-0-444-86095-8.50012-4 ↗
43. Ch.P. Ho, J.D. Plummer, S.E. Hansen, RW. Dutton: IEEE Trans. ED-30, 1438 (1983)
44. For an overview on the properties of gold in Si see: W.M. Bullis: Solid State Electr.9, 143 (1966)10.1016/0038-1101(66)90085-2 ↗
45. U. Gösele, W. Frank, A. Seeger: Appl. Phys.23, 361 (1980)10.1007/BF00903217 ↗
46. U. Gösele, F. Morehead, W. Frank, A. Seeger: Appl. Phys. Lett.38, 157 (1981)10.1063/1.92285 ↗
47. A. Seeger: Phys. Stat. Solidi (a)61, 621 (1980)10.1002/pssa.2210610225 ↗
48. M. Hill, M. Lietz, T. Sittig: J. Electrochem. Soc.129, 1579 (1982)10.1149/1.2124212 ↗
49. N.A. Stolwijk, B. Schuster, J. Hölzl: Appl. Phys. A33, 133 (1984)10.1007/BF00617619 ↗
50. F.C. Frank, D. Turnbull: Phys. Rev.104, 617 (1956)10.1103/PhysRev.104.617 ↗
51. W.R. Wilcox, T.J. La Chapelle: J. Appl. Phys.35, 240 (1964)10.1063/1.1713077 ↗
52. W.R. Wilcox, T.J. La Chapelle, D.H. Forbes: J. Electrochem. Soc.111, 1377 (1964)10.1149/1.2426008 ↗
53. F. Morehead, N. Stolwijk, W. Meyberg, U. Gösele: Appl. Phys. Lett.42, 690 (1983)10.1063/1.94074 ↗
54. T.Y. Tan, F. Morehead, U. Gösele: InDefects in Silicon, ed. by W.M. Bullis and L.C. Kimerling (Electrochem. Soc., Pennington 1983) p. 325
55. M. Yoshida, K. Saito: Jap. J. Appl. Phys.6, 573 (1967)10.1143/JJAP.6.573 ↗
56. H. Kitagawa, K. Hashimoto, M. Yoshida: Jap. J. Appl. Phys.12, 276 (1982)10.1143/JJAP.21.276 ↗
57. H. Kitagawa, K. Hashimoto, M. Yoshida: Physica116 B, 323 (1983)
58. S. Mantovani, F. Nava, C. Nobili, M. Conti, G. Pignatel: Appl. Phys. Lett.44, 328 (1984)10.1063/1.94742 ↗
59. A. Prabhakar, T.C. McGill, M.-A. Nicolet: Appl. Phys. Lett.43, 1118 (1983)10.1063/1.94247 ↗
60. J.M. Fairfield, B.J. Masters: J. Appl. Phys.38, 3148 (1967)10.1063/1.1710079 ↗
61. H.J. Mayer, H. Mehrer, K. Maier: InLattice Defects in Semiconductors 1976 (Inst. Phys. Conf. Series 31, London 1977) p. 186
62. L. Kalinowski, R. Seguin: Appl. Phys. Lett.35, 211 (1979);36, 171 (1980)10.1063/1.91097 ↗
63. A. Hirvonen, J. Anttila: Appl. Phys. Lett.35, 703 (1979)10.1063/1.91261 ↗
64. G.K. Wertheim: Phys. Rev.115, 568 (1959)10.1103/PhysRev.115.568 ↗
65. S.M. Hu: J. Vac. Sci. Techn.14, 17 (1977)10.1116/1.569117 ↗
66. T.R. Waite: Phys. Rev.107, 463 (1957)10.1103/PhysRev.107.463 ↗
67. U. Gösele, W. Frank, A. Seeger: Sol. State Commun.45, 31 (1982)10.1016/0038-1098(83)90878-5 ↗
68. H. Strunk, U. Gösele, B.O. Kolbesen: Appl. Phys. Lett.34, 530 (1979)10.1063/1.90853 ↗
69. R.M. Harris, D.A. Antoniadis: Appl. Phys. Lett.43, 937 (1983)10.1063/1.94187 ↗
70. P. Fahey, R.W. Dutton, S.M. Hu: Appl. Phys. Lett.44, 777 (1984)10.1063/1.94915 ↗
71. D. Mathiot, J.C. Pfister: J. Electr. Mat. (in press)
72. S. Mizuo, H. Higuchi: Jap. J. Appl. Phys.21, 272 (1982);22, 12 (1983)10.1143/JJAP.21.272 ↗
73. K. Taniguchi, D.A. Antoniadis, Y. Matsushita: Appl. Phys. Lett.42, 961 (1983)10.1063/1.93814 ↗
74. D. Lecrosnier, M. Gauneau, J. Paugam, G. Pelous, F. Richou, P. Henoc: Appl. Phys. Lett.34, 224 (1979)10.1063/1.90738 ↗
75. F. Morehead, U. Gösele: (To be published)
76. G.D. Watkins: InLattice Defects in Semiconductors 1974, ed. by F.A. Huntley (Inst. Phys. Conf. Series 23, London 1975) p. 1
77. R. Car, P.J. Kelly, A. Oshiyama, S.T. Pantelides: Phys. Rev. Lett.52, 1814 (1984)10.1103/PhysRevLett.52.1814 ↗
78. Y. Bar-Yam, J.D. Joannopoulous: Phys. Rev. Lett.52, 1129 (1984); Phys. Rev. B30, 2216 (1984)10.1103/PhysRevLett.52.1129 ↗
79. Y. Bar-Yam, J.D. Joannopoulous: J. Electr. Mat. (to be published)
80. R. Francis, P.S. Dobson: J. Appl. Phys.50, 280 (1979)10.1063/1.325656 ↗
81. C. Hill: InSemiconductor Silicon 1981, ed. by H.R. Huff, R.J. Kriegler, and Y. Takeishi (Electrochem. Soc., Pennington 1981) p. 988
82. H. Shiraki: Jap. J. Appl. Phys.15, 1 (1976)10.1143/JJAP.15.1 ↗
83. Y. Nabeta, T. Uno, S. Kubo, H. Tsukamoto: J. Electrochem. Soc.123, 1416 (1976)10.1149/1.2133089 ↗
84. H. Hayafuji, K. Kajiwara, S. Usui: J. Appl. Phys.53, 8639 (1982)10.1063/1.330460 ↗
85. S. Mizuo, T. Kusaka, A. Shintani, M. Nanba, H. Higuchi: J. Appl. Phys.54, 3860 (1983)10.1063/1.332611 ↗
86. P. Fahey, R.W. Dutton, M. Moslehi: Appl. Phys. Lett.43, 683 (1983)10.1063/1.94445 ↗
87. T.Y. Tan, U. Gösele: Appl. Phys. Lett.39, 86 (1981)10.1063/1.92526 ↗
88. T. Ito, T. Nozaki, H. Arakawa, M. Shinoda: Appl. Phys. Lett.23, 330 (1978)10.1063/1.90039 ↗
89. S.P. Murarka, C.C. Chang, A.C. Adams: J. Electrochem. Soc.126, 996 (1979)10.1149/1.2129223 ↗
90. T. Ito, I. Kato, T. Nozaki, T. Nakamura, H. Ishikawa: Appl. Phys. Lett.38, 370 (1981)10.1063/1.92341 ↗
91. Y. Hayafuji, K. Kajiwara: J. Electrochem. Soc.129, 2102 (1982)10.1149/1.2124388 ↗
92. T. Ito, T. Nozaki, H. Ishikawa: J. Electrochem. Soc.127, 2102 (1980)
93. T.S. Plaskett: Trans. Mat. Soc. AIME233, 809 (1965)
94. T. Abe, T. Samizo, S. Maruyama: Jap. J. Appl. Phys.5, 458 (1966)10.1143/JJAP.5.458 ↗
95. A.J.R. de Kock: Appl. Phys. Lett.16, 100 (1970)10.1063/1.1653111 ↗
96. A.J.R. de Kock: Philips Res. Reports Suppl.1 (1973)
97. H. Föll, B.O. Kolbesen: Appl. Phys.8, 319 (1975)10.1007/BF00898366 ↗
98. P.M. Petroff, A.J.R. de Kock: J. Cryst. Growth30, 117 (1975)10.1016/0022-0248(75)90210-9 ↗
99. R.J. Roksnoer, M.M.B. Van den Boom: J. Cryst. Growth53, 563 (1981)10.1016/0022-0248(81)90140-8 ↗
100. T. Abe, H. Harada: InDefects in Semiconductors II, ed. by S. Mahajan and J.W. Corbett (North-Holland, New York 1983) p. 1