The depth resolution of sputter profiling
Bibliographic record
Abstract
No abstract is available for this record. The assistant can identify its topic from the title, but cannot infer the study’s results.
Source: Not provided · Quality: missing
Research context
OpenAlex topics: Ion-surface interactions and analysis · Metal and Thin Film Mechanics · Integrated Circuits and Semiconductor Failure Analysis
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
References (46)
Show source-provided references
1. HLutz, R.Sizmann: Phys. Lett.5, 113 (1963), see also T.F.Fisher, C.E.Weber. J. Appl. Phys.23, 181 (1952)10.1016/S0375-9601(63)91712-2 ↗
2. J.L.Whitton: InPhysics of Ionized Gases 1972, ed. by M. V.Kurepa (The Institute of Physics Beograd 1972), p. 283
3. J.W.Coburn: J. Vac. Sci. Technol.13, 1037 (1976)10.1116/1.569056 ↗
4. H.H.Andersen: InPhysics of Ionized Gases 1974, ed. by V. Vujnović (Institute of Physics, Zagreb 1974), p. 361
5. H.Liebl: J. Vac. Sci. Technol.12, 385 (1975)10.1116/1.568798 ↗
6. K.Wittmaack: Appl. Phys.12, 149 (1977)10.1007/BF00896140 ↗
7. H.Liebl.: InSecondary Ion Mass Spectrometry, ed. by K. F. J. Heinrich and D. E. Newbury, NBS Publ. No. 427. Washington, D. C. (1975) p. 15
8. B.Navinćek: Prog. Surf. Sci.7, 49 (1976)10.1016/0079-6816(76)90001-0 ↗
9. W.O.Hofer, H.Liebl: Appl. Phys.8, 359 (1975)10.1007/BF00898370 ↗
10. S.Hoffmann: Appl. Phys.9, 59 (1976)10.1007/BF00901910 ↗
11. S.Hoffmann: Appl. Phys.13, 205 (1977)10.1007/BF00882481 ↗
12. K.Wittmaack, F.Schulz: Thin Solid Films52, 259 (1978)10.1016/0040-6090(78)90144-X ↗
13. Z.L.Liau, W.L.Brown, R.Homer, J.M.Poate, Appl. Phys. Lett.30, 626 (1977)10.1063/1.89285 ↗
14. P.S.Ho, J.E.Lewis, H.S.Wildman, J.K.Howard: Surf. Sci.57, 393 (1976)10.1016/0039-6028(76)90191-6 ↗
15. R.Kelly, J.B.Sanders: Surf. Sci.57, 143 (1976)10.1016/0039-6028(76)90174-6 ↗
16. P. Sigmund. Phys. Rev.184, 383 (1969)10.1103/PhysRev.184.383 ↗
17. K.B. Winterbon, P.Sigmund, J.B.Sanders: K. Dan. Vidensk. Selsk. Mat.-Fys. Medd.37, No. 14 (1970)
18. P.Sigmund: Rev. Roumaine Phys.17, 823, 969, and 1079 (1972)
19. U. Littmark, W.O.Hofer: (private communications)
20. T.Ishitani, RShimizu: Appl. Phys.6, 241 (1975)10.1007/BF00883758 ↗
21. P.K.Haff, Z.E.Switkowski: J. Appl. Phys.48, 3383 (1977)10.1063/1.324179 ↗
22. K.A.Gschneider: Solid State Phys.16, 275 (1964)10.1016/S0081-1947(08)60518-4 ↗
23. H.H.Andersen, H.L.Bay: to be published
24. H.H.Andersen, H.L.Bay: J. Appl. Phys.46, 2416 (1975)10.1063/1.321910 ↗
25. A.Sosin, W.Bauer, Stud. Radiat. Eff. Solids3, 155 (1969)
26. P.Vajda, Rev. Mod. Phys.49, 481 (1977)10.1103/RevModPhys.49.481 ↗
27. H.Schiøtt, P.V.Thomsen: Radiat. Eff.14, 39 (1972)10.1080/00337577208230471 ↗
28. V.S.Vavilov, A.E.Kiv, O.R.Niyazova, Phys. Stat. Sol. (a)32, 12 (1975)
29. W.Schilling, K.Sonnenberg: J. Phys. F (Metal Phys.)3, 322 (1973)10.1088/0305-4608/3/2/005 ↗
30. G.Slodzian: InSecondary Ion Mass Spectrometry, ed. by K.F.J. Heinrich and D.E. Newbury, NBS Publ. No. 427, Washington, D. C. (1975) p. 61
31. J.A.McHugh: Radial. Eff.21, 209 (1974)10.1080/00337577408232406 ↗
32. F.Schulz, K.Wittmaack, J.Maul: Radiat. Eff.18, 211 (1973)10.1080/00337577308232124 ↗
33. W.L.Harrington, R.E.Honig, A.M.Goodman, R.Wiliams: Apply. Phys. Lett.27, 644 (1975)10.1063/1.88345 ↗
34. H.S.Mathieu, D.E.McClure, D.Landolt: Thin Solid Films38, 281 (1976)10.1016/0040-6090(76)90007-9 ↗
35. R.Ludeke, L.Esaki, L.L.Chang: Appl. Phys. Lett.24, 417 (1974)10.1063/1.1655242 ↗
36. T.Ishitani, R.Shimizu, H.Tamura: Appl. Phys.6, 277 (1975)10.1007/BF00883764 ↗
37. P.J.Martin, W.O.Hofer: Appl: Phys. (in press)
38. K.Wittmaack:Proc. 8th Int. Conf. on X-Ray Optics and Microanalysis, Boston, Mass. (Aug. 1977) to be published
39. S.Hoffman, J.Erlewein, A.Zalar: Thin Solid Films43, 275 (1977)10.1016/0040-6090(77)90289-9 ↗
40. P.A.Büger, F.Blum, J.H.Schilling: Z. Naturforschg.32a, 144 (1977)10.1515/zna-1977-0208 ↗
41. K.B.Winterbon:Ion Implantation Range and Energy Deposition Distributions, Vol. 2 (Plenum Press, New York 1975)10.1007/978-1-4757-5612-8 ↗
42. B.Blanchard, J.L.Combasson, J.C.Bourgoin: Appl. Phys. Lett.28, 7 (1976)10.1063/1.88573 ↗
43. C.M.Garner, Y.DShen, J.S.Kim, G.L.Pearson, J.S.Harris, Jr., D.D.Edwall: J. Appl. Phys.48, 3147 (1977)10.1063/1.324046 ↗
44. T.Hirao, K.Inoue, S.Takayanagi, Y.Yaegashi: Appl. Phys. Lett.31, 505 (1977)10.1063/1.89747 ↗
45. K.Wittmaack, F.Schulz, B.Hietel: InIon Implantation in Semiconductors, ed. by S.Namba (Plenum Press, New York 1975), p. 19310.1007/978-1-4684-2151-4_25 ↗
46. H.Ryssel, H.Kranz, K.Müller, R.A.Henkelmann, J.Biersack: Appl. Phys. Lett.30, 399 (1977)10.1063/1.89419 ↗