Distribution Behavior of B and P during Al-Si Melt Directional Solidification with Open-Ended Crucible
Source abstract
Abstract
Abstract Distribution behavior of B and P during directional solidification of Al-20Si, Al-30Si and Al-40Si alloys has been investigated. Macrostructure of the Al-Si alloy ingots and concentration profile of elements B and P reveal that the elements segregate to eutectic Al-Si melt during growth of primary Si flakes, and P gradually segregates to the top of the ingots during directional solidification. An apparent segregation coefficient, k a , is introduced to describe the segregation behavior of B and P between the primary Si and the Al-Si melt and compared with thermodynamic theoretical equilibrium coefficients. The apparent segregation coefficients of B and P decrease with increase of solidification temperature.
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Research context
OpenAlex topics: Silicon and Solar Cell Technologies · Aluminum Alloy Microstructure Properties · Solidification and crystal growth phenomena
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
Affiliations
School of Engineering and Technology , China University of Geosciences , Beijing 100083 , China
Key Laboratory of Novel Thin Film Solar Cells , Institute of Applied Technology, Hefei Institutes of Physical Science, Chinese Academy of Science , Hefei 230031 , China
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