Metal/TiO2 interfaces for memristive switches
Source abstract
Abstract
The interfaces between metal electrodes and the oxide in TiO 2 -based memristive switches play a key role in the switching as well as in the I – V characteristics of the devices in different resistance states. We demonstrate here that the work function of the metal electrode has a surprisingly minor effect in determining the electronic barrier at the interface. In contrast, Ti oxides can be readily reduced by most electrode metals. The amount of oxygen vacancies created by these chemical reactions essentially determines the electronic barrier at the device interfaces.
Source: openalex_inverted_index · Quality: baseline
Research context
OpenAlex topics: Advanced Memory and Neural Computing · Neuroscience and Neural Engineering · Neural dynamics and brain function
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
References (35)
Show source-provided references
1. L.O. Chua, IEEE Trans. Circuit Theory CT-18, 507 (1971)10.1109/TCT.1971.1083337 ↗
2. L.O. Chua, S.M. Kang, Proc. IEEE 64, 209 (1976)10.1109/PROC.1976.10092 ↗
3. D.B. Strukov, G.S. Snider, D.R. Stewart, R.S. Williams, Nature 453, 80 (2008)10.1038/nature06932 ↗
4. R. Waser, R. Dittmann, G. Staikov, K. Szot, Adv. Mater. 21, 2632 (2009)10.1002/adma.200900375 ↗
5. A. Sawa, Mater. Today 11, 28 (2008)10.1016/S1369-7021(08)70119-6 ↗
6. J.J. Yang, M.D. Pickett, X. Li, D.A.A. Ohlberg, D.R. Stewart, R.S. Williams, Nat. Nanotechnol. 3, 429 (2008)10.1038/nnano.2008.160 ↗
7. D.H. Kwon, K.M. Kim, J.H. Jang, J.M. Jeon, M.H. Lee, G.H. Kim, X.S. Li, G.S. Park, B. Lee, S. Han, M. Kim, C.S. Hwang, Nat. Nanotechnol. 5, 148 (2010)10.1038/nnano.2009.456 ↗
8. Y.C. Yang, F. Pan, Q. Liu, M. Liu, F. Zeng, Nano Lett. 9, 1636 (2009)10.1021/nl900006g ↗
9. S.H. Jo, W. Lu, Nano Lett. 8, 392 (2008)10.1021/nl073225h ↗
10. M.J. Lee, S. Seo, D.C. Kim, S.E. Ahn, D.H. Seo, I.K. Yoo, I.G. Baek, D.S. Kim, I.S. Byun, S.H. Kim, I.R. Hwang, J.S. Kim, S.H. Jeon, B.H. Park, Adv. Mater. 19, 73 (2007)10.1002/adma.200601025 ↗
11. S.H. Jo, K.H. Kim, W. Lu, Nano Lett. 9, 870 (2009)10.1021/nl8037689 ↗
12. Q. Liu, W.H. Guan, S.B. Long, R. Jia, M. Liu, J.N. Chen, Appl. Phys. Lett. 92, 3 (2008)
13. B.J. Choi, D.S. Jeong, S.K. Kim, C. Rohde, S. Choi, J.H. Oh, H.J. Kim, C.S. Hwang, K. Szot, R. Waser, B. Reichenberg, S. Tiedke, J. Appl. Phys. 98, 033715 (2005)
14. B. Gao, B. Sun, H.W. Zhang, L.F. Liu, X.Y. Liu, R.Q. Han, J.F. Kang, B. Yu, IEEE Electron Device Lett. 30, 1326 (2009)10.1109/LED.2009.2032308 ↗
15. J. Borghetti, G.S. Snider, P.J. Kuekes, J.J. Yang, D.R. Stewart, R.S. Williams, Nature 464, 873 (2010)10.1038/nature08940 ↗
16. T. Hasegawa, T. Ohno, K. Terabe, T. Tsuruoka, T. Nakayama, J.K. Gimzewski, M. Aono, Adv. Mater. 22, 1831 (2010)10.1002/adma.200903680 ↗
17. H. Choi, H. Jung, J. Lee, J. Yoon, J. Park, D.J. Seong, W. Lee, M. Hasan, G.Y. Jung, H. Hwang, Nanotechnology 20, 5 (2009)
18. Q.F. Xia, W. Robinett, M.W. Cumbie, N. Banerjee, T.J. Cardinali, J.J. Yang, W. Wu, X.M. Li, W.M. Tong, D.B. Strukov, G.S. Snider, G. Medeiros-Ribeiro, R.S. Williams, Nano Lett. 9, 3640 (2009)10.1021/nl901874j ↗
19. J. Borghetti, Z.Y. Li, J. Straznicky, X.M. Li, D.A.A. Ohlberg, W. Wu, D.R. Stewart, R.S. Williams, Proc. Natl. Acad. Sci. USA 106, 1699 (2009)10.1073/pnas.0806642106 ↗
20. H.Y. Jeong, J.Y. Lee, S.Y. Choi, Adv. Funct. Mater. 20, 3912 (2010)10.1002/adfm.201001254 ↗
21. J.J. Yang, F. Miao, M.D. Pickett, D.A.A. Ohlberg, D.R. Stewart, C.N. Lau, R.S. Williams, Nanotechnology 20, 215201 (2009)
22. J.P. Strachan, M.D. Pickett, J.J. Yang, S. Aloni, A.L.D. Kilcoyne, G. Medeiros-Ribeiro, R.S. Williams, Adv. Mater. 22, 3573 (2010)10.1002/adma.201000186 ↗
23. J.J. Yang, J. Borghetti, D. Murphy, D.R. Stewart, R.S. Williams, Adv. Mater. 21, 3754 (2009)10.1002/adma.200900822 ↗
24. E. Linn, R. Rosezin, C. Kugeler, R. Waser, Nat. Mater. 9, 403 (2010)10.1038/nmat2748 ↗
25. M. Mrovec, J.M. Albina, B. Meyer, C. Elsässer, Phys. Rev. B 79, 245121 (2009)10.1103/PhysRevB.79.245121 ↗
26. J.J. Yang, J.P. Strachan, Q. Xia, D.A.A. Ohlberg, P.J. Kuekes, R.D. Kelley, W.F. Stickle, D.R. Stewart, G. Medeiros-Ribeiro, R.S. Williams, Adv. Mater. 22, 4034 (2010)10.1002/adma.201000663 ↗
27. B.M. Herbert, J. Appl. Phys. 48, 4729 (1977)10.1063/1.323539 ↗
28. R.T. Tung, Mater. Sci. Eng., R Rep. 35, 1 (2001)10.1016/S0927-796X(01)00037-7 ↗
29. C. Park, Y. Seo, J. Jung, D.W. Kim, J. Appl. Phys. 103, 054106 (2008)
30. S.M. Sze, K.K. Ng, Physics of Semiconductor Devices, 3rd edn. (Wiley, New York, 2007)
31. J.P. Strachan, J.J. Yang, R. Munstermann, A. Scholl, G. Medeiros-Ribeiro, D.R. Stewart, R.S. Williams, Nanotechnology 20, 485701 (2009)10.1088/0957-4484/20/48/485701 ↗
32. R. Münstermann, J.J. Yang, J.P. Strachan, G. Medeiros-Ribeiro, R. Dittmann, R. Waser, Phys. Status Solidi RRL 4, 16 (2009)10.1002/pssr.200903347 ↗
33. Y.A. Chang, W.A. Oates, Materials Thermodynamics (Wiley, New York, 2010)
34. P. Waldner, G. Eriksson, Calphad 23 189 (1999)10.1016/S0364-5916(99)00025-5 ↗
35. J.J. Yang, N.P. Kobayashi, J.P. Strachan, D.A.A. Ohlberg, M.D. Pickett, Z. Li, G. Medeiros-Ribeiro, R.S. Williams, Chem. Mater 23, 123 (2011)10.1021/cm1020959 ↗