Thermophoresis/diffusion as a plausible mechanism for unipolar resistive switching in metal–oxide–metal memristors
Source abstract
Abstract
We show that the SET operation of a unipolar memristor could be explained by thermophoresis, or the Soret effect, which is the diffusion of atoms, ions or vacancies in a steep temperature gradient. This mechanism explains the observed resistance switching via conducting channel formation and dissolution reported for TiO2 and other metal-oxide-based unipolar resistance switches. Depending on the temperature profile in a device, dilute vacancies can preferentially diffuse radially inward toward higher temperatures caused by the Joule heating of an electronic current to essentially condense and form a conducting channel. The RESET operation occurs via radial diffusion of vacancies away from the channel when the temperature is elevated but the gradient is small.
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Research context
OpenAlex topics: Advanced Memory and Neural Computing · Neuroscience and Neural Engineering · Neural dynamics and brain function
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References (57)
Show source-provided references
1. G. Dearnaley, A.M. Stoneham, D.V. Morgan, Electrical phenomena in amorphous oxide films. Rep. Prog. Phys. 33, 1129–1192 (1970)10.1088/0034-4885/33/3/306 ↗
2. H. Pagnia, N. Sotnik, Bistable switching in electroformed metal–insulator–metal devices. Phys. Status Solidi A 108(11), 11–65 (1988)10.1002/pssa.2211080102 ↗
3. A. Sawa, Resistive switching in transition metal oxides. Mater. Today 11, 28–36 (2008)10.1016/S1369-7021(08)70119-6 ↗
4. K.K. Likharev, CMOL technology: devices, circuits, and architectures. J. Nanoelectron. Optoelectron. 3, 203–230 (2008)10.1166/jno.2008.301 ↗
5. R. Waser, R. Dittman, G. Staikov, K. Szot, Redox-based resistive switching memories—nanoionic mechanisms, prospects, and challenges. Adv. Mater. 21, 2632–2663 (2009)10.1002/adma.200900375 ↗
6. M.T. Hickmott, Low-frequency negative resistance in thin anodic oxide films. J. Appl. Phys. 33, 2669–2682 (1962)10.1063/1.1702530 ↗
7. D.S. Jeong, H. Schroeder, R. Waser, Coexistence of bipolar and unipolar resistive switching behaviors in a Pt/TiO2/Pt stack. Electrochem. Solid-State Lett. 10, G51–G53 (2007)10.1149/1.2742989 ↗
8. L. Goux, J.G. Lisoni, M. Jurczak, D.J. Wouters, L. Courtade, Ch. Muller, Coexistence of the bipolar and unipolar resistive-switching modes in NiO cells made by thermal oxidation of Ni layers. J. Appl. Phys. 107, 024512 (2010)10.1063/1.3275426 ↗
9. D.B. Strukov, G.S. Snider, D.R. Stewart, R.S. Williams, The missing memristor found. Nature 453, 80–83 (2008)10.1038/nature06932 ↗
10. L.O. Chua, Memristor—the missing circuit element. IEEE Trans. Circuit Theory 18, 507–519 (1971)10.1109/TCT.1971.1083337 ↗
11. D.B. Strukov, J.L. Borghetti, R.S. Williams, Coupled ionic and electronic transport model of thin-film semiconductor memristive behavior. Small 5(9), 1058–1063 (2009)10.1002/smll.200801323 ↗
12. D.B. Strukov, R.S. Williams, Exponential ionic drift: Fast switching and low volatility of thin film memristors. Appl. Phys. A 94(3), 515–519 (2009)10.1007/s00339-008-4975-3 ↗
13. Y.-Y. Lin, F.-M. Lee, W.-C. Chien, Y.-C. Chen, K.-Y. Hsieh, C.-Y. Lu, A model for the RESET operation of electrochemical conducting bridge resistive memory (CB-ReRAM), in Proc. Int. Electron Device Meet., San Francisco, CA, January 2010, pp. 22.2.1–22.2.410.1109/IEDM.2010.5703411 ↗
14. F. Nardi, D. Ielmini, C. Cagli, S. Spiga, M. Fanciulli, L. Goux, D.J. Wouters, Control of filament size and reduction of reset current below 10 mA in NiO resistance switching memories. Solid-State Electron. 58, 42–47 (2011)10.1016/j.sse.2010.11.031 ↗
15. D. Ielmini, F. Nardi, C. Cagli, Physical models of size-dependent nanofilament formation and rupture in NiO resistive switching memories. Nanotechnology 22, 254022 (2011)10.1088/0957-4484/22/25/254022 ↗
16. S.F. Karg, G.I. Meijer, J.G. Bednorz, C.T. Rettner, A.G. Schrott, E.A. Joseph, C.H. Lam, M. Janousch, U. Staub, F. La Mattina, S.F. Alvarado, D. Widmer, R. Stutz, U. Drechsler, D. Caimi, Transition-metal oxide-based resistance change memories. IBM J. Res. Dev. 52(4–5), 481–492 (2008)10.1147/rd.524.0481 ↗
17. U. Russo, D. Ielmini, C. Cagli, A.L. Lacaita, S. Spigat, C. Wiemert, M. Peregot, M. Fanciulli, Conductive-filament switching analysis and self-accelerated thermal dissolution model for reset in NiO-based RRAM, in Proc. Int. Electron Devices Meet., Baltimore, MD, December 2007, pp. 775–778, art. 4419062
18. J.L. Borghetti, D.M. Strukov, M.D. Pickett, J.J. Yang, R.S. Williams, Electrical transport and thermometry of electroformed titanium dioxide memristive switches. J. Appl. Phys. 106, 124504 (2009)10.1063/1.3264621 ↗
19. S.H. Chang, S.C. Chae, S.B. Lee, C. Liu, T.W. Noh, J.S. Lee, B. Kahng, J.H. Jang, M.Y. Kim, D.-W. Kim, C.U. Jung, Effects of heat dissipation on unipolar resistance switching in Pt/NiO/Pt capacitors. Appl. Phys. Lett. 92, 183507 (2008)
20. A. Shkabko, M.H. Aguirre, I. Marozau, T. Lippert, A. Weidenkaff, Measurements of current-voltage-induced heating in the Al/SrTiO3− x N y /Al memristor during electroformation and resistance switching. Appl. Phys. Lett. 95, 152109 (2009)10.1063/1.3238563 ↗
21. J.P. Strachan, D.B. Strukov, J. Borghetti, J.J. Yang, G. Medeiros-Ribeiro, R.S. Williams, The switching location of a bipolar memristor: Chemical, thermal, and structural mapping. Nanotechnology 22, 254015 (2011)
22. N.A. Tulina, V.V. Sirotkin, Electron instability in doped-manganites-based heterojunctions. Physica C, Supercond. 400(3–4), 105–110 (2004)10.1016/j.physc.2003.07.002 ↗
23. D.B. Strukov, R.S. Williams, Intrinsic constrains on thermally-assisted memristive switching. Appl. Phys. A 102, 851–855 (2011)10.1007/s00339-011-6269-4 ↗
24. H. Schroeder, V. Zhirnov, R.K. Cavin, R. Waser, Voltage-time dilemma of pure electronic mechanisms in resistive switching memory cells. J. Appl. Phys. 107(5), 054517 (2010)10.1063/1.3319591 ↗
25. V.V. Zhirnov, R.K. Cavin, S. Menzel, E. Linn, S. Schmelzer, D. Brauhaus, C. Schindler, R. Waser, Memory devices: energy-space-time tradeoffs. Proc. IEEE 98(12), 2185–2200 (2010)10.1109/JPROC.2010.2064271 ↗
26. M. Noman, W. Jiang, P.A. Salvador, M. Skowronski, J.A. Bain, Computational investigations into the operating window for memristive devices based on homogeneous ionic motion. Appl. Phys. A 102(4), 877–883 (2011)10.1007/s00339-011-6270-y ↗
27. S.C. Chae, J.S. Lee, S. Kim, S.B. Lee, S.H. Chang, C. Liu, B. Kahng, H. Shin, D.-W. Kim, C.U. Jung, S. Seo, M.-J. Lee, T.W. Noh, Random circuit breaker network model for unipolar switching. Adv. Mater. 20, 1154–1159 (2008)10.1002/adma.200702024 ↗
28. G. Bersuker, D.C. Gilmer, D. Veksler, J. Yum, H. Park, S. Lian, L. Vandelli, A. Padovanu, L. Larcher, K. McKenna, A. Shluger, V. Iglesias, M. Porti, W. Taylor, P.D. Kirsch, R. Jammy, Metal oxide RRAM switching mechanism based on conductive filament microscopic properties, in Proc. Int. Electron Device Meet., San Francisco, CA, January 2010, pp. 19.6.1–19.6.410.1109/IEDM.2010.5703394 ↗
29. S. Larentis, C. Cagli, F. Nardi, D. Ielmini, Filament diffusion model for simulating reset and retention processes in RRAM. Microelectron. Eng. 88(7), 1119–1123 (2011)10.1016/j.mee.2011.03.055 ↗
30. S.B. Lee, J.S. Lee, S.H. Chang, H.K. Yoo, B.S. Kang, B. Kahng, M.-J. Lee, C.J. Kim, T.W. Noh, Interface-modified random circuit breaker network model applicable to both bipolar and unipolar resistance switching. Appl. Phys. Lett. 98, 033502 (2011)
31. K.M. Kim, D.S. Jeong, C.S. Hwang, Nanofilamentary resistive switching in binary oxide systems; a review on the present status and outlook. Nanotechnology 22, 254002 (2011)
32. R. Münstermann, J.J. Yang, J.P. Strachan, G. Medeiros-Reibeiro, R. Dittman, R. Waser, Morphological and electrical changes in TiO2 memristive devices induced by electroforming and switching. Phys. Status Solidi, Rapid Res. Lett. 4, 16–18 (2010)10.1002/pssr.200903347 ↗
33. I. Goldhirsch, D. Ronis, Theory of thermophoresis. I. General considerations and mode-coupling analysis. Phys. Rev. A 27, 1616–1634 (1983)10.1103/PhysRevA.27.1616 ↗
34. F. Ewart, K. Lassmann, H. Matzke, L. Manes, A. Saunders, Oxygen potential measurements in irradiated mixed oxide fuel. J. Nucl. Mater. 124, 44–55 (1984)10.1016/0022-3115(84)90008-4 ↗
35. J. Janek, H. Timm, Thermal diffusion and Soret effect in (U, Me) O2+δ : the heat of transport of oxygen. J. Nucl. Mater. 255, 116–127 (1998)10.1016/S0022-3115(98)00037-3 ↗
36. L.J.T.M. Kempers, A comprehensive thermodynamic theory of the Soret effect in a multicomponent gas, liquid, or solid. J. Chem. Phys. 115, 6330–6341 (2001)10.1063/1.1398315 ↗
37. L.O. Chua, S.M. Kang, Memristive devices and systems. Proc. IEEE 64, 209–223 (1976)10.1109/PROC.1976.10092 ↗
38. L.O. Chua, Resistance switching memories are memristors. Appl. Phys. A 102, 765–783 (2011)10.1007/s00339-011-6264-9 ↗
39. R.D. Astumian, Coupled transport at the nanoscale: the unreasonable effectiveness of equilibrium theory. Proc. Natl. Acad. Sci. USA 104, 3–4 (2007)10.1073/pnas.0609754104 ↗
40. H. Timm, J. Janek, On the Soret effect in binary nonstochiometric oxides—kinetic demixing of cuprite in a temperature gradient. Solid State Ion. 176, 1131–1143 (2005)10.1016/j.ssi.2005.01.010 ↗
41. A.S. Alexandrov, A.M. Bratkovsky, B. Bridle, S.E. Savel’ev, D.B. Strukov, R.S. Williams, Current-controlled negative differential resistance due to Joule heating in TiO2. Appl. Phys. Lett. 99, 202104 (2011)10.1063/1.3660229 ↗
42. T. Kaplan, D. Adler, Electrothermal switching in amorphous semiconductors. J. Non-Cryst. Solids 8–10, 538–543 (1972)10.1016/0022-3093(72)90189-5 ↗
43. S. Sze, Physics of Semiconductor Devices, 2nd edn. (Wiley-Interscience, New York, 1981)
44. D. Ielmini, Threshold switching mechanism by high-field energy gain in the hopping transport of chalcogenide glasses. Phys. Rev. B 78, 035308 (2008)10.1103/PhysRevB.78.035308 ↗
45. D.-H. Kwon, K.M. Kim, J.H. Jang, J.M. Jeon, M.H. Lee, G.H. Kim, X.-S. Li, G.-S. Park, B. Lee, S. Han, M. Kim, C.S. Hwang, Atomic structure of conducting nanofilaments in TiO2 resistive switching memory. Nat. Nanotechnol. 5, 148–153 (2010)10.1038/nnano.2009.456 ↗
46. H. Iddir, S. Ogut, P. Zapol, N.D. Browning, Energetics and diffusion of intrinsic surface and subsurface defects on anatase TiO2 (101). Phys. Rev. B 75, 073203 (2007)10.1103/PhysRevB.75.073203 ↗
47. M.D. Pickett, D.B. Strukov, J. Borghetti, J.J. Yang, G.S. Snider, D.R. Stewart, R.S. Williams, Switching dynamics in a titanium dioxide memristive device. J. Appl. Phys. 106, 074508 (2009)10.1063/1.3236506 ↗
48. J.J. Yang, F. Miao, M.D. Pickett, D.A.A. Ohlberg, D.R. Stewart, C.N. Lau, R.S. Williams, The mechanism of electroforming of metal oxide memristive switches. Nanotechnology 20, 215201 (2009)
49. N.F. Mott, R.W. Gurney, Electronic Processes in Ionic Crystals (Oxford University Press, New York, 1940)
50. E. Cho, S. Han, H.-S. Ahn, K.-R. Lee, S.K. Kim, C.S. Hwang, First-principles study of point defects in rutile TiO2−x . Phys. Rev. B 73, 193202 (2006)
51. D.C. Cronemeyer, Infrared absorption of reduced rutile TiO2 single crystals. Phys. Rev. 113(5), 1123–1226 (1959)10.1103/PhysRev.113.1222 ↗
52. F.M. Hossain, G.E. Murch, L. Sheppard, J. Nowotny, Ab initio electronic structure calculation of oxygen vacancies in rutile titanium dioxide. Solid State Ion. 178, 319–325 (2007)10.1016/j.ssi.2006.12.015 ↗
53. M.M. Islam, T. Bredow, A. Gerson, Electronic properties of oxygen-deficient and aluminum-doped rutile TiO2 from first principles. Phys. Rev. B 76, 045217 (2007)10.1103/PhysRevB.76.045217 ↗
54. G. Mattioli, F. Filippone, P. Alippi, A.A. Bonapasta, Ab initio study of the electronic states induced by oxygen vacancies in rutil and anatase TiO2. Phys. Rev. B 78, 241201 (2008)10.1103/PhysRevB.78.241201 ↗
55. H. Kamisaka, T. Hitosugi, T. Suenaga, T. Hasegawa, K. Yamashita, Denisty functional theory based first-principle calculation of Nb-doped anatase TiO2 and its interactions with oxygen vacancies and interstital oxygen. J. Chem. Phys. 131, 034702 (2009)10.1063/1.3157283 ↗
56. S. Park, H.-S. Ahn, C.-K. Lee, H. Kim, H. Jin, H.-S. Lee, S. Seo, J. Yu, S. Han, Interaction and ordering of vacancy defects in NiO. Phys. Rev. B 77, 134103 (2008)
57. X. Guo, C. Schindler, S. Menzel, R. Waser, Understanding the switching-off mechanism in Ag+migration based resistively switching model systems. Appl. Phys. Lett. 91, 133513 (2007)