Precise electronic structure analysis of inorganic thin films by highly optimized argon-gas-cluster ion-beam sputtering
Bibliographic record
Abstract
No abstract is available for this record. The assistant can identify its topic from the title, but cannot infer the study’s results.
Source: Not provided · Quality: missing
Research context
OpenAlex topics: Ion-surface interactions and analysis · Semiconductor materials and devices · Thin-Film Transistor Technologies
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
References (28)
Show source-provided references
1. Oxide semiconductor thin-film transistors: a review of recent advances10.1002/adma.201103228 ↗
2. Electronic defects in amorphous oxide semiconductors: a review10.1002/pssa.201800372 ↗
3. Review—semiconductor materials and devices for gas sensors10.1149/1945-7111/ac6e0a ↗
4. Wide bandgap oxide semiconductors: from materials physics to optoelectronic devices10.1002/adma.202006230 ↗
5. Recent advances in metal-oxide thin-film transistors: flexible/stretchable devices, integrated circuits, biosensors, and neuromorphic applications10.3390/coatings12020204 ↗
6. Material characteristics and applications of transparent amorphous oxide semiconductors10.1038/asiamat.2010.5 ↗
7. Surface effects in metal oxide-based nanodevices10.1039/C5NR06494E ↗
8. Surface/interface engineering for constructing advanced nanostructured photodetectors with improved performance: a brief review10.3390/nano10020362 ↗
9. Quantification of surface contamination on optical glass via sensitivity-improved calibration-free laser-induced breakdown spectroscopy10.1016/j.apsusc.2020.147984 ↗
10. Organic adlayer on inorganic materials: XPS analysis selectivity to cope with adventitious contamination10.1016/j.apsusc.2016.04.147 ↗
11. New method to correct for the influence of organic contamination on intensity ratios in quantitative XPS10.1002/(SICI)1096-9918(199908)27:8<761::AID-SIA570>3.0.CO;2-E ↗
12. A review of the analysis of surfaces and thin films by AES and XPS10.1016/0042-207X(84)90084-8 ↗
13. Diagnosis and cleaning of carbon contamination on SiO2 thin film10.1384/jsa.15.337 ↗
14. Contamination of substrate-coating interface caused by ion etching10.3390/coatings12060846 ↗
15. Quantifying the damage induced by X-ray photoelectron spectroscopy depth profiling of organic conjugated polymers10.1021/acsapm.9b00148 ↗
16. Towards reliable X-ray photoelectron spectroscopy: sputter-damage effects in transition metal borides, carbides, nitrides, and oxides10.1016/j.apsusc.2020.148599 ↗
17. Spectral artefacts post sputter-etching and how to cope with them–a case study of XPS on nitride-based coatings using monoatomic and cluster ion beams10.1016/j.apsusc.2018.02.191 ↗
18. Embedding-free method for preparation of cross-sections of organic materials for micro chemical analysis using gas cluster ion beam sputtering10.1021/acs.analchem.7b00511 ↗
19. Damage-free depth profiling of electronic structures in multilayered organic semiconductors by photoelectron spectroscopy and cluster ion beam10.1002/pssb.202100130 ↗
20. Simulation of Electron Spectra for Surface Analysis (SESSA): a novel software tool for quantitative auger-electron spectroscopy and X-ray photoelectron spectroscopy10.1002/sia.2097 ↗
21. XPS investigation of monatomic and cluster argon ion sputtering of tantalum pentoxide10.1016/j.apsusc.2017.02.006 ↗
22. Electronic densities of states from X-ray photoelectron spectroscopy10.6028/jres.074A.045 ↗
23. Practical guide for curve fitting in X-ray photoelectron spectroscopy10.1116/6.0000377 ↗
24. Fabrication of bevel structures by means of the spatial gradient of ion dose in Ar gas cluster ion beam and its unique characteristics10.1002/admi.201800825 ↗
25. Universal equation for argon gas cluster sputtering yields10.1021/jp402684c ↗
26. The same chemical state of carbon gives rise to two peaks in X-ray photoelectron spectroscopy10.1038/s41598-021-90780-9 ↗
27. Hydrogen-bond network promotes water splitting on the TiO2 surface10.1021/jacs.2c03690 ↗
28. Reexamination of band offset transitivity employing oxide heterojunctions