A large area flexible p-type transparent conducting CuS ultrathin films generated at liquid-liquid interface
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Abstract
Abstract The preparation of highly transparent, electrically conducting materials (TCMs) in the form of thin films possesses many applications, including touch screens, solar cells, smart glass, etc. Designing and making high-performance p-type materials that can match to n-type counter parts are found to be challenging even today. These thin films can be prepared directly on the substrates or more conveniently transferred to the desired substrates after the synthesis. Synthesis of ultrathin films of metal sulfide by simple liquid-liquid interface method has been known previously. However, transferring these films onto a substrate of considerable dimensions has always been a constant challenge as these films tend to break during the lift-off process. Furthermore, the transparency of these films is generally low due to the high roughness of these films. Here, we report CuS ultrathin film synthesis with varying thicknesses (∼15 nm – 40 nm) by a modified liquid-liquid interface method. We have developed two strategies to transfer these ultrathin films produced at a liquid-liquid interface onto any substrate with considerable dimensions (up to 8 cm × 4 cm) without losing electrical continuity. Optical and electrical measurements reveal that CuS thin films show a p-type conductivity with 102–103 S/cm and having transparency between 90–93% at 550 nm, which are among the highest for p-type materials known today. Further, these films on plastic substrates show highly flexible properties, which ITO lacks. We could also extend this technique to transfer large area ZnS thin-films from the liquid-liquid interface to the desired substrates.
Source: openaire · Quality: candidate unverified · Source record ↗
Research context
OpenAlex topics: Copper-based nanomaterials and applications · Quantum Dots Synthesis And Properties · ZnO doping and properties
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
References (60)
Show source-provided references
1. Past achievements and future challenges in the development of optically transparent electrodes10.1038/nphoton.2012.282 ↗
2. Oxide semiconductor thin-film transistors: a review of recent advances10.1002/adma.201103228 ↗
3. Room-temperature fabrication of transparent flexible thin-film transistors using amorphous oxide semiconductors10.1038/nature03090 ↗
4. Recent developments in p-type oxide semiconductor materials and devices10.1002/adma.201503080 ↗
5. Wide-range-tunable p-type conductivity of transparent CuI1−xBrx alloy10.1002/adfm.202003096 ↗
6. Self-compensation in semiconductors10.1103/PhysRevB.60.8138 ↗
7. Self-compensation in semiconductors: the Zn vacancy in Ga-doped ZnO10.1103/PhysRevB.84.115202 ↗
8. Flexible two-dimensional indium tin oxide fabricated using a liquid metal printing technique10.1038/s41928-019-0353-8 ↗
9. p-type electrical conduction in transparent thin films of CuAlO210.1038/40087 ↗
10. A new p-type conductive oxide with wide band GAP, SrCu2O210.1557/PROC-526-299 ↗
11. Epitaxial growth of transparent p-type conducting CuGaO2 thin films on sapphire (001) substrates by pulsed laser deposition10.1063/1.1337587 ↗
12. Bipolarity in electrical conduction of transparent oxide semiconductor CuInO2 with delafossite structure10.1063/1.1355673 ↗
13. Transparent p-type conducting CuScO2+x films10.1063/1.1289906 ↗
14. p-type transparent thin films of CuY1−xCaxO210.1016/S0040-6090(01)01362-1 ↗
15. Transparent p-type semiconductor: laCuOS layered oxysulfide10.1063/1.1319507 ↗
16. p-type conductivity in wide-band-gap BaCuQF (Q=S,Se)10.1063/1.1571224 ↗
17. Band gap engineering, band edge emission, and p-type conductivity in wide-gap LaCuOS1−xSex oxychalcogenides10.1063/1.1456240 ↗
18. Energy band structure of LaCuOCh (Ch = S, Se and Te) calculated by the full-potential linearized augmented plane-wave method10.1088/0953-8984/16/28/036 ↗
19. Syntheses, crystal and electronic structure, and some optical and transport properties of LnCuOTe (Ln=La, Ce, Nd)10.1016/j.jssc.2006.09.014 ↗
20. p-type conductivity in CuCr1−xMgxO2 films and powders10.1063/1.1372636 ↗
21. Room-temperature synthesized copper iodide thin film as degenerate p-type transparent conductor with a boosted figure of merit10.1073/pnas.1613643113 ↗
22. Room temperature wafer-scale synthesis of highly transparent, conductive CuS nanosheet films via a simple sulfur adsorption-corrosion method10.1021/acsami.0c21957 ↗
23. Perovskite Sr-doped LaCrO3 as a new p-type transparent conducting oxide10.1002/adma.201501959 ↗
24. Liquid metal-based synthesis of high performance monolayer SnS piezoelectric nanogenerators10.1038/s41467-020-17296-0 ↗
25. High-mobility p-type semiconducting two-dimensional β-TeO210.1038/s41928-021-00561-5 ↗
26. Kern · 2001 · 11
27. von Känel · 1989 · 1 · 208
28. Decher · 1997 · 843
29. Electrical conductivity control in transparent p-type (LaO)CuS thin films prepared by rf sputtering10.1063/1.1473667 ↗
30. Molecular beam epitaxy of high-quality CuI thin films on a low temperature grown buffer layer10.1063/5.0007389 ↗
31. Orava · 2014 · 265
32. Phase change and optical band gap behavior of Ge–Te–Ga thin films prepared by thermal evaporation10.1016/j.vacuum.2012.03.036 ↗
33. Growth of manganese sulfide (α-MnS) thin films by thermal vacuum evaporation: structural, morphological and optical properties10.1016/j.matchemphys.2016.06.066 ↗
34. Effect of Se addition on optical and electrical properties of chalcogenide CdSSe thin films10.1016/j.spmi.2015.10.044 ↗
35. Indium tin oxide thin films prepared by chemical vapour deposition10.1016/0040-6090(91)90137-M ↗
36. Low-cost one-step fabrication of highly conductive ZnO:Cl transparent thin films with tunable photocatalytic properties via aerosol-assisted chemical vapor deposition10.1021/acsaelm.9b00190 ↗
37. Ultrathin In2O3 nanowires with diameters below 4 nm: synthesis, reversible wettability switching behavior, and transparent thin-film transistor applications10.1021/nn2014722 ↗
38. Growth of directly transferable In2O3 nanowire mats for transparent thin-film transistor applications10.1002/adma.201003474 ↗
39. Microstructure origin of the conductivity differences in aggregated cus films of different thickness10.1021/la026433s ↗
40. A liquid metal reaction environment for the room-temperature synthesis of atomically thin metal oxides10.1126/science.aao4249 ↗
41. The liquid–liquid interface as a medium to generate nanocrystalline films of inorganic materials10.1021/ar700192d ↗
42. Template-free chemical route to ultrathin single-crystalline films of CuS and CuO employing the liquid−liquid interface10.1021/la048040u ↗
43. H3PO4 treated surface modified CuS counter electrodes with high electrocatalytic activity for enhancing photovoltaic performance of quantum dot-sensitized solar cells10.1016/j.apsusc.2018.01.233 ↗
44. A general method for the large-scale synthesis of uniform ultrathin metal sulphide nanocrystals10.1038/ncomms2181 ↗
45. Criteria for choosing transparent conductors10.1557/mrs2000.151 ↗
46. High-mobility bismuth-based transparent p-Type oxide from high-throughput material screening10.1021/acs.chemmater.5b03794 ↗
47. SrCu2O2: a p-type conductive oxide with wide band gap10.1063/1.121761 ↗
48. Transparent p-type SnOx thin film transistors produced by reactive rf magnetron sputtering followed by low temperature annealing10.1063/1.3469939 ↗
49. Direct growth of wafer-scale, transparent, p-Type reduced-graphene-oxide-like thin films by pulsed laser deposition10.1021/acsnano.9b08916 ↗
50. CuBO2: a p-type transparent oxide10.1063/1.2778755 ↗
51. Electronic structure and optoelectronic properties of transparent p-type conducting CuAlO210.1063/1.1308103 ↗
52. Magnesium, nitrogen codoped Cr2O3: a p-type transparent conducting oxide10.1063/1.3638461 ↗
53. ZnIr2O4, a p-type transparent oxide semiconductor in the class of spinel zinc-d6-transition metal oxide10.1063/1.2431548 ↗
54. Preparation of transparent p-type (La1−xSrxO)CuS thin films by r.f. sputtering technique10.1016/S0040-6090(02)00200-6 ↗
55. Transparent conducting p-type NiO thin films prepared by magnetron sputtering10.1016/0040-6090(93)90636-4 ↗
56. p-type oxides for use in transparent diodes10.1016/S0040-6090(02)00199-2 ↗
57. Sol-gel derived N-doped ZnO thin films10.1016/j.matlet.2009.07.038 ↗
58. Negligible carrier freeze-out facilitated by impurity band conduction in highly p-type GaN10.1063/1.4747466 ↗
59. Misfit layered Ca3Co4O9 as a high figure of merit p-type transparent conducting oxide film through solution processing10.1063/1.4871506 ↗
60. Conducting mechanism in the epitaxial p-type transparent conducting oxide Cr2O3:mg10.1103/PhysRevB.91.125202 ↗