Na+-doped WO3 double-layer resistive switching device for biomimetic applications
Source abstract
Abstract
• NaWO 3 double-layer provides enhanced resistive switching as compared with undoped WO 3 . • Highly doped NaWO 3 top layer operates as a Na + reservoir. • Operando optical evidence of Na + activation at low voltage. • Non-toxic and biocompatible active materials in resistive switching devices pave the way to fully biomimetic and biocompatible memristor bio-sensing and potentially biomedical applications. We report on polycrystalline double-layer NaWO 3 thin films in a two-terminal device configuration showing resistive switching (RS) based on the neuronal ion Na + for biomimetic applications. A top Na y WO 3 layer functions as a Na + reservoir, enabling fast Na + ion intercalation into a bottom Na x WO 3 layer with x < y , giving good resistance control for analog processing. Operando Raman measurements show Na + activation under 0.5 V and the electrical characterization proves that the switching is linked to the motion of Na + . The switching mechanism is investigated thoroughly by studying different film layer combinations. The observed RS performance can be explained by the change of electron emission/hopping site energy levels upon Na + intercalation. The presented devices based on biocompatible materials constitute a promising route towards an analog processing building block for emulating neuronal ion channels for emerging biomimetic and potentially biomedical applications, as well as for flexible electronics.
Source: openalex_inverted_index · Quality: baseline
Research context
OpenAlex topics: Advanced Memory and Neural Computing · Transition Metal Oxide Nanomaterials · Neuroscience and Neural Engineering
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
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