Effect of heterojunction order between CaTiO3 and Mn doped SrTiO3 on memristive performance and its mechanism analysis
Source abstract
Abstract
It is well-known that memristive devices can be applied to brain-like parallel computing, but the interface effects have an indelible impact on memristive performance. In this work, two memristive devices with Ag/CTO/SMTO/Ti and Ag/SMTO/CTO/Ti structures were fabricated based on the heterojunctions between CaTiO3 (CTO) and Mn-doped SrTiO3 (SMTO). By comparison, the Ag/CTO/SMTO/Ti device shows relatively improved memristive characteristics with the optimum sweeping voltage of 1.2 V and the switching ratio of ∼12. That is to say, changing the heterojunction order between CTO and SMTO can regulate the memristive behaviors of the device because the interface effect caused by heterojunction contact has influence on the particle migration, resulting in different rates of conductive filaments formation, so that the memristive characteristics of the device can be regulated. Finally, the resistive switching (RS) characteristics of the device are explained by in-depth mechanism analysis based on fitting experimental data. Therefore, this work not only provides a feasible method for improving the memristive characteristics of the device, but also helps to understand the influence of the interface effect on the particles motion, thereby laying the foundation for the preparation of high-capacity and efficient memristive device in artificial intelligence (AI) applications.
Source: expertdata · Quality: candidate unverified · Source record ↗
Research context
OpenAlex topics: Advanced Memory and Neural Computing · Perovskite Materials and Applications · Ferroelectric and Negative Capacitance Devices
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
References (68)
Show source-provided references
1. A solution-processed all-perovskite memory with dual-band light response and tri-mode operation10.1002/adfm.202110975 ↗
2. Towards a better understanding of the forming and resistive switching behavior of Ti-doped HfOx RRAM10.1039/D1TC04734E ↗
3. Interface-engineered reliable HfO2-based RRAM for synaptic simulation10.1039/C9TC04880D ↗
4. Energy efficient short-term memory characteristics in Ag/SnOx/TiN RRAM for neuromorphic system10.1016/j.ceramint.2022.06.328 ↗
5. Tuning oxygen vacancies and resistive switching properties in ultra-thin HfO2 RRAM via TiN bottom electrode and interface engineering10.1016/j.apsusc.2021.149386 ↗
6. Flexible nonvolatile resistive memory devices based on SrTiO3 nanosheets and polyvinylpyrrolidone composites10.1039/C7TC03481D ↗
7. Machine learning-assisted design guidelines and performance prediction of CMOS-compatible metal oxide-based resistive switching memory devices
8. In-sensor reservoir computing for language learning via two-dimensional memristors10.1126/sciadv.abg1455 ↗
9. A low-cost copper oxide thin film memristive device based on successive ionic layer adsorption and reaction method10.1016/j.mssp.2017.07.009 ↗
10. Cross-point arrays with low-power ITO-HfO2 resistive memory cells integrated on vertical III-V nanowires10.1002/aelm.202000154 ↗
11. Diode property and positive temperature coefficient of resistance of Pt/Al2O3/Nb: SrTiO310.1002/aelm.201800388 ↗
12. Adaptive synaptic memory via lithium ion modulation in RRAM devices10.1002/smll.202003964 ↗
13. An organic bipolar resistive switching memory device based on natural melanin synthesized from aeromonas sp. SNS10.1002/pssa.201800550 ↗
14. Evolution between CRS and NRS behaviors in MnO2@TiO2 nanocomposite based memristor for multi-factors-regulated memory applications10.1016/j.nanoen.2022.108117 ↗
15. Effects of switching layer morphology on resistive switching behavior: a case study of electrochemically synthesized mixed-phase copper oxide memristive devices
16. Emergence of ferroelectricity in halide perovskites10.1002/smtd.202000149 ↗
17. Super-exchange interaction induced overall optimization in ferromagnetic perovskite oxides enables ultrafast water oxidation10.1002/smll.201903120 ↗
18. Progress in high-strain perovskite piezoelectric ceramics10.1016/j.mser.2018.08.001 ↗
19. Origin of superconductivity in hole doped SrBiO3 bismuth oxide perovskite from parameter-free first-principles simulations10.1038/s41524-023-00978-w ↗
20. Photoelectric synaptic plasticity realized by 2D perovskite10.1002/adfm.201902538 ↗
21. In situ surface modification of TiO2 by CaTiO3 to improve the UV stability and power conversion efficiency of perovskite solar cells10.1063/1.5131300 ↗
22. Investigation on the highly active SrTiO3 photocatalyst toward overall H2O splitting by doping Na ion10.1016/j.jcat.2020.07.025 ↗
23. Overcoming the electroluminescence efficiency limitations of perovskite light-emitting diodes10.1126/science.aad1818 ↗
24. Synergies of electrochemical metallization and valance change in all-inorganic perovskite quantum dots for resistive switching
25. Improved resistive switching performance and in-depth mechanism analysis in Mn-doped SrTiO3-based RRAM
26. Nonvolatile electric-optical memory controlled by conductive filaments in Ti-doped BiFeO310.1002/aelm.201700551 ↗
27. Resistive switching behavior in single crystal SrTiO3 annealed by laser10.1016/j.apsusc.2016.08.013 ↗
28. Coexistence of filamentary and homogeneous resistive switching in Fe-doped SrTiO3 thin-film memristive devices10.1002/adma.201001872 ↗
29. Donor-induced performance tuning of amorphous SrTiO3 memristive nanodevices: multistate resistive switching and mechanical tunability10.1002/adfm.201501019 ↗
30. Bipolar resistive switching behavior of CaTiO3 films grown by hydrothermal epitaxy10.1039/C5RA02605A ↗
31. Formation of stable metal halide perovskite/perovskite heterojunctions10.1021/acsenergylett.0c01609 ↗
32. Cyclohexylammonium-based 2D/3D perovskite heterojunction with funnel-like energy band alignment for efficient solar cells (23.91%)
33. Interfacial engineering of a thiophene-based 2D/3D perovskite heterojunction for efficient and stable inverted wide-bandgap perovskite solar cells10.1016/j.nanoen.2021.106608 ↗
34. Memristive behaviors in Pt/BaTiO3/Nb:srTiO3 ferroelectric tunnel junctions10.1063/1.4892846 ↗
35. Fabrication of CdSe/CaTiO3 nanocomposties in aqueous solution for improved photocatalytic hydrogen production10.1016/j.apsusc.2018.08.026 ↗
36. Hydrothermal synthesis and visible-light-driven photocatalytic degradation for tetracycline of Mn-doped SrTiO3 nanocubes10.1016/j.apsusc.2015.02.008 ↗
37. A hydrothermal route to the synthesis of CaTiO3 nanocuboids using P25 as the titanium source10.1007/s11664-018-6183-z ↗
38. Mn environment in doped SrTiO3 revealed by first-principles calculation of hyperfine splittings10.1063/5.0096788 ↗
39. Significantly improved energy storage properties of sol-gel derived Mn modified SrTiO3 thin films10.1016/j.ceramint.2019.03.056 ↗
40. XRD peak profile and optical properties analysis of Ag-doped h-MoO3 nanorods synthesized via hydrothermal method10.1007/s10854-019-02694-y ↗
41. TOFSIMS and XPS characterisation of strontium in amorphous calcium phosphate sputter deposited coatings10.1016/j.matchar.2020.110739 ↗
42. Novel and efficient synthesis of Ag-ZnO nanoparticles for the sunlight-induced photocatalytic degradation10.1016/j.apsusc.2019.01.137 ↗
43. A magnetic field controlled memristor towards the design of an implantable detector10.1016/j.jcis.2023.04.027 ↗
44. Electrochemical potential controlling preparation of oxygen vacancies modified SrTiO3 with Ti3+ and Ti2+ self-doping in molten salt10.1016/j.jssc.2021.122387 ↗
45. Strong ferromagnetic manipulation of SrTiO3 from CO2-straining effect on electronic structure modulation
46. Effect of dopant loading on the structural and catalytic properties of Mn-doped SrTiO3 catalysts for catalytic soot combustion10.3390/catal8020071 ↗
47. The physics and chemistry of the Schottky barrier height10.1063/1.4858400 ↗
48. Insertion of Ga-MoO3 thin film at Cu/p-Si interface for the fabrication of MIS structure Schottky barrier diodes
49. Design of trench Schottky barrier diode on diamond for obtaining high performance10.1016/j.diamond.2023.109755 ↗
50. Photosensitive Schottky barrier diodes based on Cu/p-SnSe thin films fabricated by thermal evaporation10.1039/D1MA01005K ↗
51. High uniformity and forming-free ZnO-based transparent RRAM with HfOx inserting layer10.1088/1674-1056/27/8/087701 ↗
52. Resistive switching properties through iodine migrations of a hybrid perovskite insulating layer10.1002/admi.201601035 ↗
53. Compact pure phase CsPbBr3 perovskite film with significantly improved stability for high-performance memory10.1016/j.ceramint.2018.09.297 ↗
54. Enhanced resistive switching behavior of CH3NH3PbI3 based resistive random access memory by nickel doping10.1016/j.vacuum.2021.110862 ↗
55. Electronic synaptic plasticity and analog switching characteristics in Pt/TiOx/AlOx/AlTaON/TaN multilayer RRAM for artificial synapses10.1016/j.apsusc.2022.153906 ↗
56. Overwhelming coexistence of negative differential resistance effect and RRAM10.1039/C8CP03492C ↗
57. Unraveling the hysteretic behavior at double cations-double halides perovskite - electrode interfaces10.1016/j.nanoen.2021.106428 ↗
58. Building synergism through heterojunction of n-CaTiO3 with p-CaFe2O4 for upgraded photocatalytic degradation of pharmaceuticals
59. Tensile strain for band engineering of SrTiO3 for increasing photocatalytic activity to water splitting10.1016/j.apcatb.2020.119292 ↗
60. A novel high- performance and energy-efficient RRAM device with multi-functional conducting nanofilaments10.1016/j.nanoen.2020.105717 ↗
61. Synergistic effects of Eu and Nb dual substitution on improving the thermoelectric performance of the natural perovskite CaTiO3
62. Enhanced photocatalytic performance of SrTiO3 powder induced by europium dopants10.1016/j.jre.2020.07.002 ↗
63. ABO3 multiferroic perovskite for memristive memory and neuromorphic computing10.1039/D1NH00292A ↗
64. Unraveling the structural and morphological stability of oxygen vacancy engineered leaf-templated CaTiO3 towards photocatalytic H2 evolution and N2 fixation reactions10.1039/D1TA04180K ↗
65. Switchable diode effect in oxygen vacancy-modulated SrTiO3 single crystal10.1007/s00339-017-1179-8 ↗
66. Induced vacancy-assisted filamentary resistive switching device based on RbPbI3-xClx perovskite for RRAM application10.1021/acsami.0c10123 ↗
67. A flexible nonvolatile resistive switching memory device based on ZnO film fabricated on a foldable PET substrate10.1016/j.jcis.2018.03.001 ↗
68. Metal ion formed conductive filaments by redox process induced nonvolatile resistive switching memories in MoS2 film10.1016/j.apsusc.2017.07.257 ↗