Probing resistive switching in HfO2/Al2O3 bilayer oxides using in-situ transmission electron microscopy
Source abstract
Abstract
In this work, we investigate the resistive switching in hafnium dioxide (HfO2) and aluminum oxide (Al2O3) bilayered stacks using in-situ transmission electron microscopy and X-ray energy dispersive spectroscopy. Conductance of the HfO2/Al2O3 stack changes gradually upon electrical stressing which is related to the formation of extended nanoscale physical defects at the HfO2/Al2O3 interface and the migration and re-crystallization of Al into the oxide bulk. The results suggest two competing physical mechanisms including the redistribution of oxygen ions and the migration of Al species from the Al electrode during the switching process. While the HfO2/Al2O3 bilayered stack appears to be a good candidate for RRAM technology, the low diffusion barrier of the active Al electrode causes severe Al migration in the bi-layered oxides leading to the device to fail in resetting, and thereby, largely limiting the overall switching performance and material reliability.
Source: openalex_inverted_index · Quality: baseline
Research context
OpenAlex topics: Advanced Memory and Neural Computing · Ferroelectric and Negative Capacitance Devices · Semiconductor materials and devices
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
References (56)
Show source-provided references
1. A review of emerging non-volatile memory (NVM) technologies and applications10.1016/j.sse.2016.07.006 ↗
2. Recent progress in solution-based metal oxide resistive switching devices
3. Critical role of a double-layer configuration in solution-based unipolar resistive switching memories10.1088/1361-6528/aac9fb ↗
4. Tailoring the synaptic properties of a-IGZO memristors for artificial deep neural networks10.1063/5.0073056 ↗
5. The ultimate switching speed limit of redox-based resistive switching devices10.1039/C8FD00117K ↗
6. Study of the SET switching event of VCM-based memories on a picosecond timescale10.1063/5.0003840 ↗
7. Picosecond multilevel resistive switching in tantalum oxide thin films10.1038/s41598-020-73254-2 ↗
8. Ultralow switching energy Ni/GeOx/HfON/TaN RRAM10.1109/LED.2010.2095820 ↗
9. High performance ultra-low energy RRAM with good retention and endurance
10. Analysis of quantum conductance, read disturb and switching statistics in HfO2 RRAM using conductive AFM10.1016/j.microrel.2016.07.112 ↗
11. 10×10nm2 Hf/HfOx crossbar resistive RAM with excellent performance, reliability and low-energy operation
12. Analog switching characteristics in TiW/Al2O3/Ta2O5/Ta RRAM devices10.1063/1.5100075 ↗
13. A Ti/AlOx/TaOx/Pt analog synapse for memristive neural network10.1109/LED.2018.2860053 ↗
14. Multibit memory operation of metal-oxide bi-layer memristors10.1038/s41598-017-17785-1 ↗
15. Monolithically integrated RRAM- and CMOS-based in-memory computing optimizations for efficient deep learning10.1109/MM.2019.2943047 ↗
16. A. Valentian, F. Rummens, E. Vianello, T. Mesquida, C.L. d. Boissac, O. Bichler, and C. Reita, "Fully integrated spiking neural network with analog neurons and RRAM synapses", 2019 IEEE International Electron Devices Meeting (IEDM), (2019). 10.1109/IEDM19573.2019.8993431.10.1109/IEDM19573.2019.8993431 ↗
17. Metal–Oxide RRAM"10.1109/JPROC.2012.2190369 ↗
18. Redox-based resistive switching memories - Nanoionic mechanisms, prospects, and challenges10.1002/adma.200900375 ↗
19. Reliability challenges with materials for analog computing
20. Challenges in materials and devices for resistive-switching-based neuromorphic computing10.1063/1.5047800 ↗
21. RTN insight to filamentary instability and disturb immunity in ultra-low power switching HfOx and AlOx RRAM
22. "Random telegraph noise nano-spectroscopy in high-κ dielectrics using scanning probe microscopy techniques,"
23. Weebit, CEA-Leti advance ReRAM technology
24. Low power and high speed bipolar switching with a thin reactive Ti buffer layer in robust HfO2 based RRAM
25. Understanding of the endurance Failure in Scaled HfO2-based 1T1R RRAM through vacancy mobility degradation
26. Balancing SET/RESET Pulse for >10(10) Endurance in HfO2/Hf 1T1R Bipolar RRAM10.1109/TED.2012.2218607 ↗
27. Impact of the HfO2/Al2O3 stacking order on unipolar RRAM devices10.1016/j.mee.2017.05.024 ↗
28. Interface-induced two-step RESET for filament-based multi-level resistive memory10.1016/j.spmi.2015.12.044 ↗
29. HfO2/Al2O3multilayer for RRAM arrays: a technique to improve tail-bit retention10.1088/0957-4484/27/39/395201 ↗
30. Effect of Inserting Al2O3 layer and device structure in HfO2-Based ReRAM for low power operation
31. Improved resistive switching characteristics by Al2O3 layers inclusion in HfO2-Based RRAM devices10.1149/2.006308ssl ↗
32. Annealing effect of Al2O3 tunnel barriers in HfO2-Based ReRAM DEVICES on nonlinear resistive switching characteristics10.1166/jnn.2015.11138 ↗
33. Excellent resistive switching properties of atomic layer-deposited Al2O3/HfO2/Al2O3 trilayer structures for non-volatile memory applications10.1186/s11671-015-0846-y ↗
34. Impact of ultra-thin Al2O3–y layers on TiO2–x ReRAM switching characteristics"10.1063/1.4983006 ↗
35. The key impact of incorporated Al2O3 barrier layer on W-based ReRAM switching performance
36. Multi-level resistive switching in HfO2/Al2O3/HfO2 based memristor on transparent ITO electrode
37. The nature of dielectric breakdown
38. The radial distribution of defects in a percolation path10.1063/1.3056659 ↗
39. Direct observations of nanofilament evolution in switching processes in HfO2-based resistive random access memory by In Situ TEM studies
40. Situ biasing TEM investigation of resistive switching events in TiO2-based RRAM
41. In situ observation of filamentary conducting channels in an asymmetric Ta2O5−x/TaO2−x bilayer structure10.1038/ncomms3382 ↗
42. Compliance current dominates evolution of NiSi2 defect size in Ni/dielectric/Si RRAM devices10.1016/j.microrel.2015.12.037 ↗
43. Evolution of filament formation in Ni/HfO2/SiOx/Si-Based RRAM Devices10.1002/aelm.201500130 ↗
44. Uncorrelated multiple conductive filament nucleation and rupture in ultra-thin high-κ dielectric based resistive random access memory
45. In situ TEM observation on the interface-type resistive switching by electrochemical redox reactions at a TiN/PCMO interface10.1039/C6NR06293H ↗
46. Silicon out-diffusion and aluminum in-diffusion in devices with atomic-layer deposited La2O3 thin films10.1063/1.3025850 ↗
47. Oxygen vacancy kinetics mechanism of the negative forming-free process and multilevel resistance based on hafnium oxide RRAM10.1155/2019/6724018 ↗
48. LXXVII. The thermal expansion of aluminium at low temperatures as measured by an X-ray diffraction method10.1080/14786435608238150 ↗
49. Williams · 2009
50. Methods for improving ductility of tungsten - a review10.1016/j.ijrmhm.2018.04.012 ↗
51. ReRAM from material study to CMOS Co-integration
52. Temperature-dependent Electromigration Reliability
53. Electromigration and related failure mechanisms in integrated circuit interconnects10.1179/imr.1994.39.3.97 ↗
54. Electromigration failure modes in aluminum metallization for semiconductor devices10.1109/PROC.1969.7340 ↗
55. Probing and manipulating the interfacial defects of InGaAs dual-layer metal oxides at the atomic scale
56. Physics of the switching kinetics in resistive memories10.1002/adfm.201500825 ↗