An implantable memristor towards biomedical applications
Bibliographic record
Abstract
No abstract is available for this record. The assistant can identify its topic from the title, but cannot infer the study’s results.
Source: Not provided · Quality: missing
Research context
OpenAlex topics: Advanced Memory and Neural Computing · Neuroscience and Neural Engineering · Ferroelectric and Negative Capacitance Devices
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
References (59)
Show source-provided references
1. Flexible artificial sensory systems based on neuromorphic devices10.1021/acsnano.0c10049 ↗
2. Advances in flexible organic field-effect transistors and their applications for flexible electronics10.1038/s41528-022-00133-3 ↗
3. Organic nonvolatile memory transistors for flexible sensor arrays10.1126/science.1179963 ↗
4. Nature-inspired structural materials for flexible electronic devices10.1021/acs.chemrev.7b00291 ↗
5. Ultra-thin chips for high-performance flexible electronics10.1038/s41528-018-0021-5 ↗
6. Flexible electronic systems on plastic substrates and textiles for smart wearable technologies10.1002/admt.202000071 ↗
7. A universal interface for plug-and-play assembly of stretchable devices10.1038/s41586-022-05579-z ↗
8. The missing memristor found10.1038/nature06932 ↗
9. Robust polyethylenimine electrolyte for high performance and thermally stable atomic switch memristors10.1002/adfm.202004514 ↗
10. Memristive' switches enable 'stateful' logic operations via material implication10.1038/nature08940 ↗
11. Graphene oxide quantum dots based memristors with progressive conduction tuning for artificial synaptic learning10.1002/adfm.201803728 ↗
12. HfO2-based memristor as an artificial synapse for neuromorphic computing with tri-layer HfO2/BiFeO3/HfO2 design10.1002/adfm.202107131 ↗
13. Alloying conducting channels for reliable neuromorphic computing10.1038/s41565-020-0694-5 ↗
14. Neuro-inspired computing chips10.1038/s41928-020-0435-7 ↗
15. Artificial synapses with short- and long-term memory for spiking neural networks based on renewable materials10.1021/acsnano.7b03347 ↗
16. Flexible multistate data storage devices fabricated using natural lignin at room temperature10.1021/acsami.6b14566 ↗
17. Stretchable and conformable synapse memristors for wearable and implantable electronics10.1039/C8NR05336G ↗
18. A hierarchically encoded data storage device with controlled transiency
19. Non-zero-crossing current-voltage hysteresis behavior induced by capacitive effects in bio-memristor10.1016/j.jcis.2019.10.087 ↗
20. Nature-derived, biocompatible silibinin based bioresorbable neuromorphic device for implantable medical electronics10.1016/j.apsusc.2023.156814 ↗
21. Multichannel parallel processing of neural signals in memristor arrays10.1126/sciadv.abc4797 ↗
22. Biodegradable and flexible artificial nociceptor based on Mg/MgO threshold switching memristor10.1007/s40843-022-2292-7 ↗
23. Memristor-based neuromodulation device for real-time monitoring and adaptive control of neuronal populations10.1021/acsaelm.2c00198 ↗
24. A flexible resistive switching device for logical operation applications in wearable systems
25. Enamel repair with amorphous ceramics10.1002/adma.201907067 ↗
26. Preparation and biological evaluation of ZrO2 all-ceramic teeth by DLP technology10.1016/j.ceramint.2020.01.152 ↗
27. Preparation and characterization of ZrO2-Al2O3 bioceramics by stereolithography technology for dental restorations
28. Enhanced biomedical applicability of ZrO2-SiO2 ceramic composites in 3D printed bone scaffolds10.1038/s41598-022-10731-w ↗
29. Hybrid gate dielectric materials for unconventional electronic circuitry10.1021/ar4002262 ↗
30. Low-voltage and high-performance field-effect transistors based on ZnxSn1-xO nanofibers with a ZrOx dielectric10.1039/C8NR03887B ↗
31. Role of fluoride doping in low-temperature combustion-synthesized ZrOx dielectric films10.1021/acsami.1c22853 ↗
32. Resistive switching in atomic layer deposited HfO2/ZrO2 nanolayer stacks10.1016/j.apsusc.2020.146015 ↗
33. Role of IGZO thickness for oxygen reservoir control in stacked IGZO/ZrOx layers: towards reliable, uniform performance of flexible random-access memories10.1016/j.jallcom.2022.166199 ↗
34. Stability of silver nanowire based electrodes under environmental and electrical stresses10.1039/C4NR06783E ↗
35. Electronic synapses made of layered two-dimensional materials10.1038/s41928-018-0118-9 ↗
36. Co-existence of bipolar nonvolatile and volatile resistive switching based on WO3 nanowire for applications in neuromorphic computing and selective memory10.1063/5.0113433 ↗
37. Voltage-controlled conversion from CDS to MDS in an azobenzene-based organic memristor for information storage and logic operations10.1021/acsami.2c12850 ↗
38. Transition from direct tunneling to field emission in metal-molecule-metal junctions10.1103/PhysRevLett.97.026801 ↗
39. Understanding the conduction and switching mechanism of Ti/AlOx/TaOx/Pt analog memristor10.1016/j.physleta.2019.125877 ↗
40. In-depth physical mechanism analysis and wearable applications of HfOx-based flexible memristors10.1021/acsami.2c16569 ↗
41. The effect of graphene and reduced graphene oxide on the resistive switching behavior of La0.7Ba0.3MnO3
42. highly tunable carrier tunneling in vertical graphene-WS2-graphene van der waals heterostructures10.1021/acsnano.2c00536 ↗
43. Flexible and insoluble artificial synapses based on chemical cross-linked wool keratin10.1002/adfm.202002882 ↗
44. A carbon-based memristor design for associative learning activities and neuromorphic computing10.1039/D0NR02894K ↗
45. Superior resistive switching memory and biological synapse properties based on a simple TiN/SiO2/p-Si tunneling junction structure10.1039/C6TC04261A ↗
46. Toward a reliable synaptic simulation using Al-doped HfO2 RRAM10.1021/acsami.9b21530 ↗
47. Improved threshold switching characteristics of vanadium oxide/oxynitride-based multilayer selector in a cross-point array10.1016/j.jallcom.2022.166192 ↗
48. Ultrathin piezotronic transistors with 2nm channel lengths10.1021/acsnano.8b01957 ↗
49. Laser-assisted interface engineering for functional interfacial layer of Al/ZnO/Al resistive random access memory (RRAM)10.1021/acsami.0c06633 ↗
50. Low-temperature characteristics of magnesium fluoride based bipolar RRAM devices10.1039/D1NR05887H ↗
51. A flexible corn starch-based biomaterial device integrated with capacitive-coupled memristive memory, mechanical stress sensing, synapse, and logic operation functions10.1002/aelm.202201017 ↗
52. Robust resistive memory devices using solution-processable metal-coordinated azo aromatics10.1038/nmat5009 ↗
53. A calibratable sensory neuron based on epitaxial VO2 for spike-based neuromorphic multisensory system10.1038/s41467-022-31747-w ↗
54. Multilevel resistive switching effect in sillenite structure Bi12TiO20 thin films10.1063/1.4884376 ↗
55. Recent progress in physically transient resistive switching memory10.1039/D0TC03668D ↗
56. A compute-in-memory chip based on resistive random-access memory10.1038/s41586-022-04992-8 ↗
57. In-memory computing with resistive switching devices10.1038/s41928-018-0092-2 ↗
58. The future of electronics based on memristive systems10.1038/s41928-017-0006-8 ↗
59. Integrated memristor network for physiological signal processing10.1002/aelm.202300021 ↗