Mössbauer investigation of iron impurities in vitreous germanium selenide
Source abstract
Abstract
Films of vitreous germanium selenide GeSe modified with iron impurities are investigated using 57Fe Mössbauer spectroscopy. It is found that, at low temperatures T < 295 K, the iron impurity centers are stabilized in three structurally nonequivalent positions, more specifically, the Fe3+ impurity centers are stabilized in octahedral and tetrahedral positions, whereas the Fe2+ impurity centers are stabilized in octahedral positions. At higher temperatures T > 295 K, the iron impurity centers located in octahedral and tetrahedral positions undergo a rapid electron exchange, which leads to the formation of an “averaged” iron state.
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Research context
OpenAlex topics: Phase-change materials and chalcogenides · Chalcogenide Semiconductor Thin Films · Iron-based superconductors research
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References (2)
Show source-provided references
1. Tsendin, K.D., Impurity and Defect Electronic States in Doped Vitreous Chalcogenide Semiconductors, in Elektronnye yavleniya v khal’kogenidnykh stekloobraznykh poluprovodnikakh (Electronic Phenomena in Vitreous Chalcogenide Semiconductors), St. Petersburg: Nauka, 1996, pp. 34–113 [in Russian].
2. Seregin, P.P. and Andreev, A.A., Application of the Mössbauer Effect to Investigations of Vitreous Materials, in Mössbauer Spectroscopy of Frozen Solutions, Vertes, A. and Nagy, D.L., Eds., Budapest: Akademiai Kiado, 1990. Translated under the title Messbauerovskaya spektroskopiya zamorozhennykh rastvorov, Moscow: Mir, 1998, pp. 294–330.