journal article·2006-10

Mössbauer investigation of iron impurities in vitreous germanium selenide

E. S. Khuzhakulov

Glass Physics and Chemistry· Volume 32· Issue 5
Publisher page

Abstract

Films of vitreous germanium selenide GeSe modified with iron impurities are investigated using 57Fe Mössbauer spectroscopy. It is found that, at low temperatures T < 295 K, the iron impurity centers are stabilized in three structurally nonequivalent positions, more specifically, the Fe3+ impurity centers are stabilized in octahedral and tetrahedral positions, whereas the Fe2+ impurity centers are stabilized in octahedral positions. At higher temperatures T > 295 K, the iron impurity centers located in octahedral and tetrahedral positions undergo a rapid electron exchange, which leads to the formation of an “averaged” iron state.
Source: openalex_inverted_index · Quality: baseline

Research context

OpenAlex topics: Phase-change materials and chalcogenides · Chalcogenide Semiconductor Thin Films · Iron-based superconductors research

SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.

References (2)

Show source-provided references
1. Tsendin, K.D., Impurity and Defect Electronic States in Doped Vitreous Chalcogenide Semiconductors, in Elektronnye yavleniya v khal’kogenidnykh stekloobraznykh poluprovodnikakh (Electronic Phenomena in Vitreous Chalcogenide Semiconductors), St. Petersburg: Nauka, 1996, pp. 34–113 [in Russian].
2. Seregin, P.P. and Andreev, A.A., Application of the Mössbauer Effect to Investigations of Vitreous Materials, in Mössbauer Spectroscopy of Frozen Solutions, Vertes, A. and Nagy, D.L., Eds., Budapest: Akademiai Kiado, 1990. Translated under the title Messbauerovskaya spektroskopiya zamorozhennykh rastvorov, Moscow: Mir, 1998, pp. 294–330.