Tuning the electrical properties of unintentionally doped epitaxial p -type α-SnO thin films while maintaining a shallow hole ionization energy

Abstract

Research context

OpenAlex topics: ZnO doping and properties · Thin-Film Transistor Technologies · Gas Sensing Nanomaterials and Sensors

SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.

Affiliations

Department of Materials Science and Engineering, Cornell University 1 , Ithaca, New York 14853,

Department of Physics, Cornell University 2 , Ithaca, New York 14853,

Department of Materials Science and Engineering, University of California at Irvine 3 , Irvine, California 92697,

Oden Institute for Computational Engineering and Sciences, The University of Texas at Austin 4 , Austin, Texas 78712,

Department of Physics, The University of Texas at Austin 5 , Austin, Texas 78712,

Department of Physics and Astronomy, University of California at Irvine 6 , Irvine, California 92697,

Irvine Materials Research Institute, University of California at Irvine 7 , Irvine, California 92697,

School of Electrical and Computer Engineering, Cornell University 8 , Ithaca, New York 14853,

Kavli Institute at Cornell for Nanoscale Science 9 , Ithaca, New York 14853,

Leibniz-Institut für Kristallzüchtung 10 , Max-Born-Str. 2, Berlin 12489,

Funding

U.S. Department of Energy · Semiconductor Research Corporation · Defense Sciences Office, DARPA · Office of Science · Basic Energy Sciences · National Energy Research Scientific Computing Center

References (71)