DataVXAPL MaterialsPaper
journal article·2025-12-01Open access

Erratum: “Growth of conductive Si-doped α-Ga2O3 by suboxide molecular-beam epitaxy” [APL Mater. 13, 101117 (2025)]

Jacob Steele, Julianne Chen, Tamá Burrell, Naomi A. Pieczulewski, Debaditya Bhattacharya, Kathleen Smith, Katie Gann, Michael O. Thompson, Huili G. Xing, Debdeep Jena, David A. Muller, Michael D. Williams, M. K. Indika Senevirathna, Darrell G. Schlom

APL Materials· Volume 13· Issue 12
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Abstract

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Research context

OpenAlex topics: Ga2O3 and related materials · GaN-based semiconductor devices and materials · Dielectric properties of ceramics

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Affiliations

Department of Materials Science and Engineering, Cornell University 1 , Ithaca, New York 14853,

Platform for the Accelerated Realization, Analysis, and Discovery of Interface Materials (PARADIM), Cornell University 2 , Ithaca, New York 14853,

Department of Physics, Clark Atlanta University 3 , Atlanta, Georgia 30314,

School of Electrical and Computer Engineering, Cornell University 4 , Ithaca, New York 14853,

Kavli Institute at Cornell for Nanoscale Science 5 , Ithaca, New York 14853,

School of Applied and Engineering Physics, Cornell University 6 , Ithaca, New York 14853,

Leibniz-Institut für Kristallzüchtung 7 , Max-Born-Str. 2, 12489 Berlin,

References (2)

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1. Growth of conductive Si-doped α-Ga2O3 by suboxide molecular-beam epitaxy10.1063/5.0299750 ↗
2. Realization of conductive n-type doped α-Ga2O3 on m-plane sapphire grown by a two-step pulsed laser deposition process10.1002/pssa.202200721 ↗