Erratum: “Influence of the temperature on growth by ammonia source molecular beam epitaxy of wurtzite phase ScAlN alloy on GaN” [APL Mater. 11, 031105 (2023)]
Bibliographic record
Abstract
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Research context
OpenAlex topics: GaN-based semiconductor devices and materials · Metal and Thin Film Mechanics · ZnO doping and properties
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Affiliations
University Côte d’Azur, CNRS, CRHEA 1 , rue B. Gregory, 06560 Valbonne, France
MINES PARIS, PSL University, Center for Material Forming (CEMEF), UMR CNRS 2 , 06904 Sophia Antipolis, France
References (1)
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1. Influence of the temperature on growth by ammonia source molecular beam epitaxy of wurtzite phase ScAlN alloy on GaN10.1063/5.0139588 ↗