Erratum: “Epitaxial growth of GaN films on nearly lattice-matched hafnium substrates using a low-temperature growth technique” [APL Mater. 4, 076104 (2016)]
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Source: openalex_inverted_index · Quality: short
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OpenAlex topics: GaN-based semiconductor devices and materials · ZnO doping and properties · Semiconductor materials and devices
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Affiliations
The University of Tokyo 1 Institute of Industrial Science (IIS), , 4-6-1 Komaba, Tokyo 153-8505, Japan
Japan Science and Technology Agency 2 PRESTO, , 4-1-8 Honcho, Kawaguchi, Saitama 332-0012, Japan
Japan Science and Technology Corporation 3 ACCEL, , 5 Sanbancho, Chiyoda-ku, Tokyo 102–0075, Japan
References (1)
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1. APL Mater. · 2016 · 4 · 07610410.1063/1.4959119 ↗