Erratum: “Structural, optical, and electrical properties of orthorhombic κ-(InxGa1−x)2O3 thin films” [APL Mater. 7, 022525 (2019)]
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Abstract
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Source: openalex_inverted_index · Quality: short
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OpenAlex topics: Ga2O3 and related materials · Semiconductor materials and devices · ZnO doping and properties
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Affiliations
Felix Bloch Institute for Solid State Physics, Universität Leipzig 1 , Linnéstraße 5, 04103 Leipzig, Germany
Department of Applied Physics, Aalto University 2 , P.O. Box 15100, FIN-00076 Aalto, Finland
References (1)
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1. APL Mater. · 2019 · 7 · 02252510.1063/1.5054394 ↗