Negative magnetoresistance in antiferromagnetic topological insulating phase of GdxBi2−xTe3−ySey
Source abstract
Abstract
Antiferromagnetic topological insulators have attracted great attention in the condensed matter physics owing to the fundamental interest in exotic quantum states and topological antiferromagnetic spintronics. Starting with the typical topological insulator of Bi2Te3, we introduced the magnetic order by substituting Gd at the Bi site and tuned the Fermi level by substituting Se at the Te site. That is, we prepared single crystals of GdxBi2−xTe3−ySey with various x (= 0.02 and 0.06) and y (= 0.1, 0.2, 0.5, 0.7, 1.0, and 1.5). The magnetic data revealed an antiferromagnetic order for x = 0.06, and the transport data manifested the charge neutral point at y = 0.7. Combining all these results together, the material with x = 0.06 and y = 0.7 is characterized as an antiferromagnetic topological insulator, where we observed exotic magnetotransport properties such as weak antilocalization and negative longitudinal magnetoresistance that are frequently analyzed as chiral anomalies in Weyl materials.
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Research context
OpenAlex topics: Topological Materials and Phenomena · Advanced Condensed Matter Physics · Graphene research and applications
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
Affiliations
Department of Physics, Sogang University 1 , Seoul 04107, South Korea
Division of Physical Metrology, Center for Electromagnetic Metrology, Korea Research Institute of Standards and Science 2 , Daejeon 34113, South Korea
Department of Physics, Pohang University of Science and Technology 3 , Pohang, Gyeongbuk 37673, South Korea
Funding
National Research Foundation of Korea
References (47)
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