journal article·2023-02-01Open access

Negative magnetoresistance in antiferromagnetic topological insulating phase of GdxBi2−xTe3−ySey

Jin-Hyeon Jun, Jinsu Kim, Sang Hyun Ji, Sang-Eon Lee, Soo-Whan Kim, Sung Jung Joo, Kyoung-Min Kim, Ki-Seok Kim, Myung-Hwa Jung

APL Materials· Volume 11· Issue 2

Abstract

Antiferromagnetic topological insulators have attracted great attention in the condensed matter physics owing to the fundamental interest in exotic quantum states and topological antiferromagnetic spintronics. Starting with the typical topological insulator of Bi2Te3, we introduced the magnetic order by substituting Gd at the Bi site and tuned the Fermi level by substituting Se at the Te site. That is, we prepared single crystals of GdxBi2−xTe3−ySey with various x (= 0.02 and 0.06) and y (= 0.1, 0.2, 0.5, 0.7, 1.0, and 1.5). The magnetic data revealed an antiferromagnetic order for x = 0.06, and the transport data manifested the charge neutral point at y = 0.7. Combining all these results together, the material with x = 0.06 and y = 0.7 is characterized as an antiferromagnetic topological insulator, where we observed exotic magnetotransport properties such as weak antilocalization and negative longitudinal magnetoresistance that are frequently analyzed as chiral anomalies in Weyl materials.
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Research context

OpenAlex topics: Topological Materials and Phenomena · Advanced Condensed Matter Physics · Graphene research and applications

SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.

Affiliations

Department of Physics, Sogang University 1 , Seoul 04107, South Korea

Division of Physical Metrology, Center for Electromagnetic Metrology, Korea Research Institute of Standards and Science 2 , Daejeon 34113, South Korea

Department of Physics, Pohang University of Science and Technology 3 , Pohang, Gyeongbuk 37673, South Korea

Funding

National Research Foundation of Korea

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