Integration of TaOx-based resistive-switching element and GaAs diode
Source abstract
Abstract
We report the integration of one selection diode and one resistive-switching memory element (1D1R) structure based on a GaAs diode on germanium-on-insulator on a Si substrate integrated with Cr/TaOx/Al memory element. The 1D1R device showed unipolar resistive-switching with an ON/OFF resistance ratio of over 102 within the voltage range 1.1 V–2.0 V. In the low resistance state, a forward-to-reverse current ratio of 60 was obtained at ±1 V.
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Research context
OpenAlex topics: Advanced Memory and Neural Computing · Transition Metal Oxide Nanomaterials · CCD and CMOS Imaging Sensors
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Affiliations
Nanyang Technological University 1 School of Electrical and Electronic Engineering, , 50 Nanyang Avenue, Singapore 639798
National University of Singapore 2 Department of Electrical and Computer Engineering, , 4 Engineering Drive 3, Singapore 117576
Institute of Materials Research Engineering (IMRE) 3 , Agency for Science, Technology and Research (A*STAR), 3 Research Link, Singapore 117602
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