Complementary switching in single Nb3O7(OH) nanowires
Source abstract
Abstract
Single nanowires and networks are considered as promising candidates for miniaturized memristive devices for brain-inspired systems. Moreover, single crystalline nanostructures are useful model systems to gain a deeper understanding in the involved switching mechanism of the investigated material. Here, we report on hydrothermally grown single crystalline Nb3O7(OH) nanowires showing a complementary resistive switching (CRS) behavior. The CRS characteristics can be related to an oxygen vacancy migration at the electrode/metal hydroxide interface. Therefore, an oxygen plasma treatment is used to reduce the oxygen vacancy content, resulting in a total reduction of the device conductivity. Furthermore, temporal resolved current–voltage measurements demonstrate the dependence of the destructive readout process of the resistance states on the voltage amplitude and polarity.
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Research context
OpenAlex topics: Advanced Memory and Neural Computing · Transition Metal Oxide Nanomaterials · Neuroscience and Neural Engineering
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
Affiliations
Department of Physics, University of Konstanz 1 , 78457 Konstanz, Germany
Max-Planck-Institut für Eisenforschung GmbH 2 , Max-Planck-Straße 1, 40237 Düsseldorf, Germany
Funding
Deutsche Forschungsgemeinschaft
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