Spontaneous formation of nanostructures during pulsed laser deposition of epitaxial half-Heusler TiNiSn on MgO(001)
Source abstract
Abstract
The half-Heusler alloy TiNiSn is a promising material for thermoelectric applications that is inexpensive and non-toxic. We demonstrate the epitaxial growth of smooth TiNiSn thin films on MgO(001) single crystal substrates by pulsed laser deposition, using transmission electron microscopy to investigate nanoscale structural and chemical inhomogeneities. In particular, an interfacial reaction results in the formation of a titanium-rich oxide nanolayer at the substrate interface, and this maintains epitaxy but perturbs film composition. Segregation effects are observed throughout the film, producing a narrow range of off-stoichiometric, half-Heusler compositions. The propensity of titanium to oxidise also leads to the commensurate formation of parasitic titanium oxide nanostructures which may be overlooked in bulk techniques but are a key feature that drives both the formation of Ni-enriched, full-Heusler phases and the local decomposition of the half-Heusler to form additional nickel-stannide phases.
Source: crossref · Quality: baseline
Research context
OpenAlex topics: Advanced Thermoelectric Materials and Devices · Heusler alloys: electronic and magnetic properties · Chalcogenide Semiconductor Thin Films
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
Affiliations
SUPA, School of Physics and Astronomy, University of Glasgow 1 , Glasgow G12 8QQ, United Kingdom
Institute of Chemical Sciences and Centre for Advanced Energy Storage and Recovery, School of Engineering and Physical Sciences, Heriot-Watt University 2 , Edinburgh EH14 4AS, United Kingdom
Funding
Engineering and Physical Sciences Research Council
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