Thermoelectric transport at F4TCNQ–silicon interface
Source abstract
Abstract
Hybrid organic-inorganic materials are among the latest class of materials proposed for thermoelectric applications. The organic-inorganic interface is critical in determining the effective transport properties of the hybrid material. We study the thermoelectric properties of the tetrafluoro-tetracyanoquinodimethane (F4TCNQ)–silicon interface. Transfer of electrons from silicon to F4TCNQ results in holes trapped within the screening length of the interface that can move parallel to the interface. We measure the response of these trapped charges to applied temperature differential and compare the thermoelectric transport properties of the silicon with and without F4TCNQ. The results confirm the presence of interface charges and demonstrate an enhanced interface thermoelectric power factor. These outcomes of this study could be used in designing 3D hybrid structures with closely packed interfaces to replicate a bulk thermoelectric material.
Source: crossref · Quality: baseline
Research context
OpenAlex topics: Advanced Thermoelectric Materials and Devices · Thermal properties of materials · Organic and Molecular Conductors Research
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
Affiliations
Department of Materials Science and Engineering, University of Virginia 1 , Charlottesville, Virginia 22904, USA
Department of Electrical and Computer Engineering, University of California 2 , Santa Barbara, California 93106, USA
Department of Electrical and Computer Engineering, University of Virginia 3 , Charlottesville, Virginia 22904, USA
Funding
National Science Foundation
References (46)
Show source-provided references
1. High electron mobility transistor based on a GaN–AlxGa1–xN heterojunction10.1063/1.109775 ↗
2. Charge control and mobility studies for an AlGaN/GaN high electron mobility transistor10.1063/1.369493 ↗
3. Characterization of interface states in Al2O3/AlGaN/GaN structures for improved performance of high-electron-mobility transistors10.1063/1.4859576 ↗
4. Interface roughness and asymmetry in InAs/GaSb superlattices studied by scanning tunneling microscopy10.1103/physrevlett.72.2749 ↗
5. Cross-sectional imaging of individual layers and buried interfaces of graphene-based heterostructures and superlattices10.1038/nmat3386 ↗
6. On-chip cooling by superlattice-based thin-film thermoelectrics10.1038/nnano.2008.417 ↗
7. Effects of molecular interface modification in hybrid organic-inorganic photovoltaic cells10.1063/1.2737977 ↗
8. Interface engineering of highly efficient perovskite solar cells10.1126/science.1254050 ↗
9. Interface energetics in organo-metal halide perovskite-based photovoltaic cells10.1039/c4ee00168k ↗
10. Interfaces in bulk thermoelectric materials. A review for current opinion in colloid and interface science10.1016/j.cocis.2009.05.001 ↗
11. Study of interface effects in thermoelectric microrefrigerators10.1063/1.1289776 ↗
12. New directions for low-dimensional thermoelectric materials10.1002/adma.200600527 ↗
13. Delville · 2017
14. Charge transfer doping of silicon10.1103/physrevlett.112.155502 ↗
15. Donor deactivation in silicon nanostructures10.1038/nnano.2008.400 ↗
16. Electron mobilities in modulation-doped semiconductor heterojunction superlattices10.1063/1.90457 ↗
17. The role of MBE in recent quantum Hall effect physics discoveries10.1016/j.physe.2003.09.035 ↗
18. Surface transfer doping of semiconductors10.1126/science.1127589 ↗
19. Surface transfer doping of semiconductors10.1016/j.progsurf.2009.06.002 ↗
20. Quantitative analyses of enhanced thermoelectric properties of modulation-doped PEDOT:PSS/undoped Si (001) nanoscale heterostructures10.1039/c6nr06950a ↗
21. Enhanced thermoelectric properties for PEDOT:PSS/undoped Ge thin-film bilayered heterostructures10.1002/aelm.201800624 ↗
22. Thermoelectric properties of hybrid organic–inorganic superlattices10.1021/jp3025039 ↗
23. Enhancement of thermoelectric properties by modulation-doping in silicon germanium alloy nanocomposites10.1021/nl3003045 ↗
24. Power factor enhancement by modulation doping in bulk nanocomposites10.1021/nl201206d ↗
25. Engineering of materials
26. Enhanced thermoelectric transport in modulation-doped GaN/AlGaN core/shell nanowires10.1088/0957-4484/27/1/015204 ↗
27. Higher mobility in bulk semiconductors by separating the dopants from the charge-conducting band–a case study of thermoelectric PbSe10.1039/c5mh00021a ↗
28. Thermoelectric power factor enhancement by ionized nanoparticle scattering10.1063/1.3625950 ↗
29. Electronic structure and current injection in zinc phthalocyanine doped with tetrafluorotetracyanoquinodimethane: Interface versus bulk effects10.1016/s1566-1199(02)00033-2 ↗
30. Optimized hole injection with strong electron acceptors at organic-metal interfaces10.1103/physrevlett.95.237601 ↗
31. Energy-level alignment at organic/metal and organic/organic interfaces10.1002/adma.200802893 ↗
32. Low voltage organic light emitting diodes featuring doped phthalocyanine as hole transport material10.1063/1.121982 ↗
33. Low-voltage organic electroluminescent devices using pin structures10.1063/1.1432110 ↗
34. Controlling electrical properties of conjugated polymers via a solution-based P-type doping10.1002/adma.200800735 ↗
35. Improved performance of inverted planar perovskite solar cells with F4-TCNQ doped PEDOT:PSS hole transport layers10.1039/c6ta10212c ↗
36. Solution-crystallized organic field-effect transistors with charge-acceptor layers: High-mobility and low-threshold-voltage operation in air10.1002/adma.201101027 ↗
37. Surface transfer doping of diamond (100) by tetrafluoro-tetracyanoquinodimethane10.1021/ja072133r ↗
38. Surface transfer P-type doping of epitaxial graphene10.1021/ja071658g ↗
39. Holes doping effect on the phase transition of VO2 film via surface adsorption of F4TCNQ molecules10.1016/j.apsusc.2018.03.228 ↗
40. Observation of charge transfer states of F4-TCNQ on the 2-methylpropene chemisorbed Si(100)(2 × 1) surface10.1016/j.elspec.2009.04.006 ↗
41. Charge transfer and molecular orientation of tetrafluoro-tetracyanoquinodimethane on a hydrogen-terminated Si(111) surface prepared by a wet chemical method10.1021/jz100463q ↗
42. Quantitative analysis of chemical interaction and doping of the Si(111) native oxide surface with tetrafluoro-tetracyanoquinodimethane10.1063/1.4871402 ↗
43. p-type conductivity in silicon nanowires induced by heterojunction interface charge transfer10.1063/1.3501122 ↗
44. First-principles calculation of charge transfer at the silicon-organic interface10.1021/acs.jpcc.7b03275 ↗
45. Sticking coefficients for atoms and molecules at the surfaces of interstellar dust grains10.1093/mnras/213.2.295 ↗
46. Molecular self-assembly in a poorly screened environment: F4TCNQ on graphene/BN10.1021/acsnano.5b05322 ↗