Reorganization of CDW stacking in 1T-TaS2 by an in-plane electrical bias
Source abstract
Abstract
1T-TaS2 is a 2D quantum material supporting charge density waves (CDWs) at room temperature. The strong correlations in this material make its electrical properties extremely sensitive to external stimuli such as an electrical bias and illumination. Recently, we demonstrated that the optical properties of this material also considerably change with electrical bias and light. With light, we showed that the CDW domains across layers stack differently and thus result in a unity-order change in the refractive index. Here, we demonstrate that an in-plane electrical bias also changes the CDW stacking in 1T-TaS2. However, the stacking change with electrical bias opposes that with illumination. Our experiments at room temperature suggest that an in-plane electrical bias sets the CDWs sliding and making way for the higher energy stacking configurations to switch to the ground-state stacking. The demonstration here sheds light on the origin of the giant electro-optical effect previously observed in 1T-TaS2 and paves the way for low-power MHz-fast electrically tunable optical devices.
Source: crossref · Quality: baseline
Research context
OpenAlex topics: Quantum and electron transport phenomena · 2D Materials and Applications · Advanced Memory and Neural Computing
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
Affiliations
Applied Physics Graduate Program, Smalley-Curl Institute, Rice University 1 , Houston, Texas 77005, USA
Electrical and Computer Engineering, Rice University 2 , Houston, Texas 77005, USA
References (19)
Show source-provided references
1. Quantum many-body systems out of equilibrium10.1038/nphys3215 ↗
2. Light-tunable 1T-TaS2 charge-density-wave oscillators10.1021/acsnano.8b05756 ↗
3. Photoinduced phase transitions in two-dimensional charge-density-wave 1T-TaS210.1088/1674-1056/28/5/058504 ↗
4. Possible light-induced superconductivity in K3C60 at high temperature10.1038/nature16522 ↗
5. Gate-induced superconductivity in a monolayer topological insulator10.1126/science.aar4426 ↗
6. Current-induced magnetization switching using an electrically insulating spin-torque generator10.1126/sciadv.aar2250 ↗
7. A charge-density-wave oscillator based on an integrated tantalum disulfide–boron nitride–graphene device operating at room temperature10.1038/nnano.2016.108 ↗
8. Total-ionizing-dose effects on threshold switching in 1T-TaS2 charge density wave devices10.1109/led.2017.2763597 ↗
9. Transistor-less logic circuits implemented with 2-D charge density wave devices10.1109/led.2018.2858244 ↗
10. Proton-irradiation-immune electronics implemented with two-dimensional charge-density-wave devices10.1039/c9nr01614g ↗
11. High-frequency current oscillations in charge-density-wave 1T-TaS2 devices: Revisiting the “narrow band noise” concept10.1063/5.0007043 ↗
12. Controlling the metal-to-insulator relaxation of the metastable hidden quantum state in 1T-TaS210.1126/sciadv.1500168 ↗
13. In-plane electrical bias tunable optical properties of 1T-TaS210.1364/ome.9.000497 ↗
14. Large optical tunability from charge density waves in 1T-TaS2 under incoherent illumination10.1021/acs.nanolett.0c02234 ↗
15. Light-induced reorganization of charge density wave stacking in 1T-TaS210.1063/5.0053824 ↗
16. Possible origin of nonlinear conductivity and large dielectric constant in the commensurate charge-density-wave phase of 1T-TaS210.1103/physrevb.97.195117 ↗
17. Stacking-driven gap formation in layered 1T-TaS210.1103/physrevb.98.195134 ↗
18. Origin of the insulating phase and first-order metal-insulator transition in 1T-TaS210.1103/physrevlett.122.106404 ↗
19. Collapse of layer dimerization in the photo-induced hidden state of 1T-TaS210.1038/s41467-020-15079-1 ↗