journal article·2014-07-01Open access

Transport in ZnCoO thin films with stable bound magnetic polarons

Tim Kaspar, Jan Fiedler, Ilona Skorupa, Danilo Bürger, Oliver G. Schmidt, Heidemarie Schmidt

APL Materials· Volume 2· Issue 7

Abstract

Diluted magnetic ZnCoO films with 5 at.% Co have been fabricated by pulsed laser deposition on c-plane sapphire substrates and Schottky and Ohmic contacts have been prepared in top-top configuration. The diode current is significantly reduced after the diode has been subjected to an external magnetic field. In the reverse bias range the corresponding positive magnetoresistance is persistent and amounts to more than 1800% (50 K), 240% (30 K), and 50% (5 K). This huge magnetoresistance can be attributed to the large internal magnetic field in depleted ZnCoO with ferromagnetic exchange between stable bound magnetic polarons.
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Research context

OpenAlex topics: ZnO doping and properties · Magnetic and transport properties of perovskites and related materials · Advanced Condensed Matter Physics

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Affiliations

Physics and Materials Research 1 Institute of Ion-Beam , Helmholtz-Zentrum Dresden-Rossendorf, Dresden 01328, Germany

Engineering and Information Technology 2 Faculty of Electrical , Chemnitz University of Technology, Chemnitz 09107, Germany

Institute for Integrative Nanosciences 3 , IFW Dresden, Dresden 01069, Germany

Funding

Deutsche Forschungsgemeinschaft

References (15)

Show source-provided references
1. 2011 · 197
2. Dyakonov · 2008 · 279
3. Phys. Rev. Lett. · 2008 · 101 · 07660110.1103/PhysRevLett.101.076601 ↗
4. Phys. Rev. B · 2006 · 73 · 20534210.1103/PhysRevB.73.205342 ↗
5. Appl. Phys. Lett. · 2007 · 91 · 23211010.1063/1.2819603 ↗
6. Nat. Mater. · 2005 · 4 · 17310.1038/nmat1310 ↗
7. New J. Phys. · 2008 · 10 · 06500210.1088/1367-2630/10/6/065002 ↗
8. Appl. Phys. Lett. · 2014 · 104 · 05241210.1063/1.4864187 ↗
9. Jpn. J. Appl. Phys. · 2010 · 49 · 04300210.1143/JJAP.49.043002 ↗
10. IEEE Electron Dev. Lett. · 2013 · 34 · 127110.1109/LED.2013.2278538 ↗
11. Phys. Rev. B · 1975 · 11 · 444010.1103/PhysRevB.11.4440 ↗
12. Phys. Rev. Lett. · 1983 · 51 · 147210.1103/PhysRevLett.51.1472 ↗
13. Phys. Rev. B. · 2007 · 76 · 13441710.1103/PhysRevB.76.134417 ↗
14. Rev. Mod. Phys. · 1985 · 57 · 28710.1103/RevModPhys.57.287 ↗
15. 2013 · 65