journal article·2025-04-01Open access

Micromagnetic simulations for magnetic-field-free magnetization switching by spin–orbit torque in a perpendicularly magnetized (Ga,Mn)As single layer

Miao Jiang, Xinyuan Yang, Yitao Yu, Shinobu Ohya, Masaaki Tanaka

APL Materials· Volume 13· Issue 4

Abstract

Spin–orbit torque (SOT) provides an efficient electrical means of magnetization switching in magnetic materials, presenting a significant potential for advancing next-generation information storage and memory technologies. In this study, we successfully demonstrate highly efficient SOT magnetization switching in a perpendicularly magnetized (Ga,Mn)As single layer, achieved without the assistance of an external magnetic field. To further investigate the underlying physical mechanisms, we employed micromagnetic simulations incorporating the Dzyaloshinskii–Moriya interaction, known for breaking the in-plane symmetry in SOT magnetization switching. Our findings indicate that the Dzyaloshinskii–Moriya interaction (DMI) plays a crucial role in enabling field-free spin–orbit torque (SOT) magnetization switching in the (Ga,Mn)As layer. Furthermore, we found that the direction of the DM effective field is determined by the initial magnetization states, leading to varying polarities of SOT magnetization switching. This work deepens our understanding of field-free magnetization switching mechanisms and paves the way for developing highly efficient SOT-based devices.
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Research context

OpenAlex topics: Magnetic properties of thin films · Magnetic and transport properties of perovskites and related materials · Magnetic Properties and Applications

SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.

Affiliations

School of Materials Science and Engineering, Beijing Institute of Technology 1 , Haidian, Beijing 100081,

National Key Laboratory of Science and Technology on Materials under Shock and Impact, Beijing Institute of Technology 2 , Haidian, Beijing 100081,

Materials Intelligent Innovation Laboratory (MIIL), Beijing Institute of Technology 3 , Zhuhai, Guangdong 519088,

Department of Electrical Engineering and Information Systems, The University of Tokyo 4 , Bunkyo-ku, Tokyo 113-8656,

Center for Spintronics Research Network (CSRN), Graduate School of Engineering, The University of Tokyo 5 , Bunkyo-ku, Tokyo 113-8656,

Institute for Nano Quantum Information Electronics, The University of Tokyo 6 , Meguro-ku, Tokyo 153-8505,

Funding

National Natural Science Foundation of China · Grants-in-Aid for Scientific Research · CREST Program of the Japan Science and Technology Agency · Spintronics Research Network of Japan

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