Epitaxial integration of superconducting nitrides with cubic GaN
Source abstract
Abstract
Epitaxial combination of transition metal nitrides and group III-nitrides holds significant potential for novel device architectures, given their wide array of properties and similar lattice constants. However, the mixture of hexagonal and cubic crystals limits structural quality and has stymied development. This work will discuss the molecular beam epitaxy synthesis of metastable cubic GaN on 3C-SiC templates and its integration with cubic ZrN and NbN superconductors in single and multilayer heterostructures. The fully cubic nature of GaN and the epitaxial nature of all layers are confirmed via in situ and ex situ techniques. The electrical transport properties of transition metal nitrides on cubic GaN (001) are compared to those grown directly on 3C-SiC (001) and c-plane hexagonal GaN templates. The determination of a similar growth window for cubic wide-bandgap and superconducting metal nitrides creates a platform for new epitaxial device architectures and potential applications in metamaterials, quantum information science, and condensed matter physics.
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Research context
OpenAlex topics: GaN-based semiconductor devices and materials · Semiconductor materials and devices · Ga2O3 and related materials
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
Affiliations
Idaho National Lab 1 , Idaho Falls, Idaho 83415,
Micron School of Materials Science and Engineering, Boise State University 2 , Boise, Idaho 83725,
Department of Electrical and Computer Engineering, Tufts University 3 , Medford, Massachusetts 02155,
Funding
Idaho Operations Office, U.S. Department of Energy · DOE Minority Serving Instituion Partnership Program · Basic Energy Sciences · NSF Graduate Fellowship Research Program
References (40)
Show source-provided references
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