Photoinduced transformations in Ga-Ge-S : Er films prepared by laser deposition
Source abstract
Abstract
Films in the Ga2S3-GeS2-Er2S3 system are prepared through ultraviolet laser deposition. It is found that the films are characterized by the photobleaching effect whose magnitude can be as large as 120 nm. In this case, the refractive index decreases by 15%. The mechanism responsible for the revealed effect is proposed, and image recording is accomplished.
Source: openaire · Quality: candidate unverified · Source record ↗
Research context
OpenAlex topics: Phase-change materials and chalcogenides · Chalcogenide Semiconductor Thin Films · Semiconductor materials and interfaces
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References (6)
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