Ultraviolet emission from low resistance Cu2SnS3/SnO2 and CuInS2/Sn:In2O3 nanowires
Source abstract
Abstract
SnO2 and Sn:In2O3 nanowires were grown on Si(001), and p-n junctions were fabricated in contact with p-type Cu2S which exhibited rectifying current–voltage characteristics. Core-shell Cu2SnS3/SnO2 and CuInS2/Sn:In2O3 nanowires were obtained by depositing copper and post-growth processing under H2S between 100 and 500 °C. These consist mainly of tetragonal rutile SnO2 and cubic bixbyite In2O3. We observe photoluminescence at 3.65 eV corresponding to band edge emission from SnO2 quantum dots in the Cu2SnS3/SnO2 nanowires due to electrostatic confinement. The Cu2SnS3/SnO2 nanowires assemblies had resistances of 100 Ω similar to CuInS2/In2O3 nanowires which exhibited photoluminescence at 3.0 eV.
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Research context
OpenAlex topics: ZnO doping and properties · Copper-based nanomaterials and applications · Quantum Dots Synthesis And Properties
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
Affiliations
Nanostructured Materials & Devices Laboratory, School Of Engineering and Department of Mechanical and Manufacturing Engineering, University of Cyprus 1 , P.O. Box 20537, Nicosia 1678, Cyprus
Research Center of Ultrafast Science, Department of Physics, University of Cyprus 2 , P.O. Box 20537, Nicosia 1678, Cyprus
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