Tunnel and electrostatic coupling in graphene-LaAlO3/SrTiO3 hybrid systems
Source abstract
Abstract
We report on the transport properties of hybrid devices obtained by depositing graphene on a LaAlO3/SrTiO3 oxide junction hosting a 4 nm-deep 2-dimensional electron system. At low graphene-oxide inter-layer bias, the two electron systems are electrically isolated, despite their small spatial separation. A very efficient reciprocal gating of the two neighboring 2-dimensional systems is shown. A pronounced rectifying behavior is observed for larger bias values and ascribed to the interplay between electrostatic field-effects and tunneling across the LaAlO3 barrier. The relevance of these results in the context of strongly coupled bilayer systems is discussed.
Source: openalex_inverted_index · Quality: baseline
Research context
OpenAlex topics: Electronic and Structural Properties of Oxides · Graphene research and applications · Topological Materials and Phenomena
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
Affiliations
NEST, Scuola Normale Superiore, 56127 Pisa, Italy
Center for Nanotechnology Innovation @NEST, Istituto Italiano di Tecnologia, Piazza San Silvestro 12, 56127 Pisa, Italy
CNR-SPIN and Dipartimento di Fisica, Complesso Universitario di Monte S.Angelo, Via Cintia, 80126 Naples, Italy
Istituto Italiano di Tecnologia, Graphene Labs, Via Morego 30, I-16163 Genova, Italy
NEST, Istituto Nanoscienze-CNR and Scuola Normale Superiore, 56127 Pisa, Italy
Funding
Seventh Framework Programme (FP7)
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