journal article·2017-04-01Open access

Research Update: Ionotronics for long-term data storage devices

Y. Unutulmazsoy, R. Merkle, I. Rastegar, J. Maier, J. Mannhart

APL Materials· Volume 5· Issue 4

Abstract

Data storage materials suffer from limited lifetime. Thus, there is a necessity for new data storage systems for archiving purposes. Systems based on chemical reactions such as the oxidation of corrosion-resistant metals are attractive candidates because they offer in principle very long-term stability. We have therefore investigated oxidation kinetics of Cr, Al, Ti, V, Zn, Ni, and Co. Here we present the results and discuss in detail fundamental issues of thin film oxidation, the limits of diffusion controlled oxidation, and possible ways to increase the oxidation rate constants. Co showed the highest oxidation rate constant (kp = 2.5 × 10−9 cm2/s at 540 °C) and is therefore considered as a promising candidate for data archiving.
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Research context

OpenAlex topics: Semiconductor materials and devices · Advanced Memory and Neural Computing · Electronic and Structural Properties of Oxides

SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.

Affiliations

Max Planck Institute for Solid State Research , 70569 Stuttgart, Germany

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