Competing strain relaxation mechanisms in epitaxially grown Pr0.48Ca0.52MnO3 on SrTiO3
Source abstract
Abstract
We investigated the impact of strain relaxation on the current transport of Pr0.48Ca0.52MnO3 (PCMO) thin films grown epitaxially on SrTiO3 single crystals by pulsed laser deposition. The incorporation of misfit dislocations and the formation of cracks are identified as competing mechanisms for the relaxation of the biaxial tensile strain. Crack formation leads to a higher crystal quality within the domains but the cracks disable the macroscopic charge transport through the PCMO layer. Progressive strain relaxation by the incorporation of misfit dislocations, on the other hand, results in a significant decrease of the activation energy for polaron hopping with increasing film thickness.
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Research context
OpenAlex topics: Magnetic and transport properties of perovskites and related materials · Electronic and Structural Properties of Oxides · Ferroelectric and Piezoelectric Materials
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Affiliations
1Research Center Jülich, Peter Grünberg Institut, Electronic Materials (PGI-7), 52425 Jülich, Germany
University of Glasgow 2 SUPA, School of Physics and Astronomy, , Glasgow G12 8QQ, United Kingdom
RWTH Aachen University 3 Institute of Inorganic Chemistry (IAC), , Landoltweg 1, 52074 Aachen, Germany
Funding
European Union Council, 7th Framework Program · Deutsche Forschungsgemeinschaft
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