DataVXAPL MaterialsPaper
journal article·2016-10Open access

Composition-dependent charge transport and temperature-dependent density of state effective mass interpreted by temperature-normalized Pisarenko plot in Bi2−xSbxTe3 compounds

Tae-Ho An, Young Soo Lim, Mi Jin Park, Jang-Yeul Tak, Soonil Lee, Hyung Koun Cho, Jun-Young Cho, Chan Park, Won-Seon Seo

APL Materials· Volume 4· Issue 10
Publisher pageOpen full text
Source abstract

Abstract

Composition-dependent charge transport and temperature-dependent density of state effective mass-dependent Seebeck coefficient were investigated in Bi2−xSbxTe3 (x = 1.56-1.68) compounds. The compounds were prepared by the spark plasma sintering of high-energy ball-milled powder. High-temperature Hall measurements revealed that the charge transport in the compounds was governed dominantly by phonon scattering and influenced additionally by alloy scattering depending on the amount of Sb. Contrary effects of Sb content on the Seebeck coefficient were discussed in terms of carrier concentration and density of state effective mass, and it was elucidated by temperature-normalized Pisarenko plot for the first time.
Source: openalex_inverted_index · Quality: baseline

Research context

Metals & alloysCeramics & glasses

OpenAlex topics: Advanced Thermoelectric Materials and Devices · Topological Materials and Phenomena · Magnetic and transport properties of perovskites and related materials

SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.

Affiliations

Energy and Environmental Materials Division, Korea Institute of Ceramic Engineering and Technology, Jinju 52851, South Korea

Department of Materials Science and Engineering, Seoul National University, Seoul 08826, South Korea

Department of Materials System Engineering, Pukyong National University, Busan 48547, South Korea

School of Advanced Materials Science and Engineering, Sungkyunkwan University, Suwon 16419, South Korea

Funding

National Research Foundation of Korea (NRF)

References (32)

Show source-provided references
1. Rowe D. M. · 199510.1201/9781420049718 ↗
2. Goldsmid H. J. · 196410.1007/978-1-4899-5723-8 ↗
3. Tritt T. M. · 2001
4. 10.1088/0508-3443/5/11/30310.1088/0508-3443/5/11/303 ↗
5. 10.1126/science.115644610.1126/science.1156446 ↗
6. 10.1021/nl800992810.1021/nl8009928 ↗
7. 10.1039/C2EE23549H10.1039/C2EE23549H ↗
8. 10.1016/j.enconman.2014.07.08310.1016/j.enconman.2014.07.083 ↗
9. 10.1016/j.jallcom.2006.07.09010.1016/j.jallcom.2006.07.090 ↗
10. 10.1063/1.242500710.1063/1.2425007 ↗
11. 10.1063/1.309702610.1063/1.3097026 ↗
12. 10.1063/1.475211010.1063/1.4752110 ↗
13. 10.1002/aenm.20140139110.1002/aenm.201401391 ↗
14. 10.1126/science.aaa416610.1126/science.aaa4166 ↗
15. 10.1016/S0925-8388(00)01063-X10.1016/S0925-8388(00)01063-X ↗
16. 10.1016/j.jcrysgro.2004.12.14410.1016/j.jcrysgro.2004.12.144 ↗
17. 10.1051/epjap:200804010.1051/epjap:2008040 ↗
18. 10.1016/S1002-0071(12)60066-510.1016/S1002-0071(12)60066-5 ↗
19. 10.1038/am.2013.8610.1038/am.2013.86 ↗
20. 10.1016/0022-3697(65)90084-310.1016/0022-3697(65)90084-3 ↗
21. 10.1016/0022-3697(86)90010-710.1016/0022-3697(86)90010-7 ↗
22. 10.1016/0022-3697(88)90130-810.1016/0022-3697(88)90130-8 ↗
23. Huheey J. E. · 1993
24. B. G. Streetman, Solid State Electronic Devices (Prentice-Hall, Englewood Cliffs, NJ, 1980), pp. 52–93.
25. Ioffe A. F. · 1960
26. 10.1039/c3ta12764h10.1039/c3ta12764h ↗
27. 10.1002/pssa.20092513310.1002/pssa.200925133 ↗
28. 10.1103/PhysRevB.77.12520910.1103/PhysRevB.77.125209 ↗
29. 10.1063/1.235763810.1063/1.2357638 ↗
30. 10.1038/srep0688810.1038/srep06888 ↗
31. 10.1016/0038-1101(72)90172-410.1016/0038-1101(72)90172-4 ↗
32. 10.1007/BF0054972010.1007/BF00549720 ↗