journal article·2020-12-01Open access

Prediction of crystalline Ta4O9 phase using first principles-based cluster expansion calculations

Christian Søndergaard Pedersen, Jin Hyun Chang, Yang Li, Nini Pryds, Juan Maria Garcia Lastra

APL Materials· Volume 8· Issue 12

Abstract

Tantalum is the only element of Group 5 in the periodic table that lacks any experimental reports on the existence of reduced crystalline oxide between the pentoxide (Ta2O5) and the dioxide (TaO2). We computationally predict the existence of a novel tantalum oxide with Ta4O9 stoichiometry, which lies at the midpoint between Ta2O5 and TaO2. The ground-state Ta4O9 structure was found through simulated annealing based on a cluster expansion model, which is trained using 186 density functional theory calculations. The newfound Ta4O9 material has space group number 10 (P2/m), and it can be viewed as an oxygen-deficient λ-Ta2O5 structure in which oxygen vacancies aggregate pair-wise in nearest-neighbor sites. Tad–Tad bonds fill the spatial void of the oxygen vacancies, keeping the system non-magnetic and non-metallic. The synthesis of the new Ta4O9 crystal is deemed feasible through a controlled reduction of λ-Ta2O5. The reported Ta4O9 has the potential to open new avenues in catalysis and resistive switching device applications where the reduced tantalum oxides are broadly employed.
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Research context

OpenAlex topics: Advanced Memory and Neural Computing · Semiconductor materials and devices · Electronic and Structural Properties of Oxides

SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.

Affiliations

Department of Energy Conversion and Storage, Technical University of Denmark , DK-2800 Kgs. Lyngby, Denmark

References (45)

Show source-provided references
1. Preparation of mesoporous tantalum oxide and its enhanced photocatalytic activity10.1016/j.matlet.2010.09.027 ↗
2. Preparation of reduced tantalum pentoxide by electrochemical technique for oxygen reduction reaction10.1016/j.jpowsour.2014.06.102 ↗
3. Tailoring the synthesis of tantalum-based thin films for biomedical application: Characterization and biological response10.1016/j.msec.2019.03.072 ↗
4. A fast, high-endurance and scalable non-volatile memory device made from asymmetric Ta2O5–x/TaO2−x bilayer structures10.1038/nmat3070 ↗
5. Amorphous to crystalline transformation in Ta2O5 studied by Raman spectroscopy10.1002/jrs.3142 ↗
6. Oxide heterostructure resistive memory10.1021/nl401287w ↗
7. Tuning the stoichiometry and electrical properties of tantalum oxide thin films10.1016/j.apsusc.2018.11.153 ↗
8. Influence of substrate temperature on the structural, dielectric and optical properties of RF magnetron sputtered Ta2O5 films10.1088/1757-899x/8/1/012025 ↗
9. Lattice structure of β-Ta2O510.1016/0022-5088(64)90036-0 ↗
10. Structures of tantalum pentoxide thin films formed by reactive sputtering of Ta metal10.1016/0040-6090(94)06402-4 ↗
11. Tuning the resistive switching in tantalum oxide-based memristors by annealing10.1063/5.0004722 ↗
12. Stable metallic enrichment in conductive filaments in TaOx-based resistive switches arising from competing diffusive fluxes10.1002/aelm.201800954 ↗
13. Highly reliable TaOx reram and direct evidence of redox reaction mechanism
14. High switching endurance in TaOx memristive devices10.1063/1.3524521 ↗
15. Rietveld analysis of x-ray diffraction pattern from β-Ta2O5 oxide10.1134/1.1481927 ↗
16. Ta2O5 polymorphs: Structural motifs and dielectric constant from first principles10.1063/1.3308475 ↗
17. Hidden structural order in orthorhombic Ta2O510.1103/physrevlett.110.235502 ↗
18. Defect dominated charge transport in amorphous Ta2O5 thin films10.1063/1.373747 ↗
19. Redox-based resistive switching memories-nanoionic mechanisms, prospects, and challenges10.1002/adma.200900375 ↗
20. In situ observation of filamentary conducting channels in an asymmetric Ta2O5−x/TaO2−x bilayer structure10.1038/ncomms3382 ↗
21. Comparison on TiO2 and TaO2 based bipolar resistive switching devices
22. An x-ray investigation of the tantalum-oxygen system10.3891/acta.chem.scand.08-0240 ↗
23. Die niederen oxide des tantals10.1016/0022-5088(66)90131-7 ↗
24. Structure des oxides de tantale10.1143/jjap.6.21 ↗
25. Preparation of TaO2 thin films using NbO2 template layers by a pulsed laser deposition technique10.1016/j.tsf.2015.12.066 ↗
26. Electron diffraction investigation of tantalum dioxide in thin films
27. Oxygen vacancy defects in Ta2O5 showing long-range atomic re-arrangements10.1063/1.4869553 ↗
28. Enhanced oxygen vacancy diffusion in Ta2O5 resistive memory devices due to infinitely adaptive crystal structure10.1063/1.4945579 ↗
29. Theoretical studies on oxygen vacancy migration energy barrier in the orthorhombic λ phase Ta2O510.1016/j.commatsci.2019.109148 ↗
30. CLEASE: A versatile and user-friendly implementation of cluster expansion method10.1088/1361-648x/ab1bbc ↗
31. Ab initio molecular dynamics for liquid metals10.1103/physrevb.47.558 ↗
32. Ab initio molecular-dynamics simulation of the liquid-metal–amorphous-semiconductor transition in germanium10.1103/physrevb.49.14251 ↗
33. Efficiency of ab-initio total energy calculations for metals and semiconductors using a plane-wave basis set10.1016/0927-0256(96)00008-0 ↗
34. Efficient iterative schemes for ab initio total-energy calculations using a plane-wave basis set10.1103/physrevb.54.11169 ↗
35. Projector-augmented wave method10.1103/physrevb.50.17953 ↗
36. Generalized gradient approximation made simple10.1103/physrevlett.77.3865 ↗
37. Hybrid functionals based on a screened Coulomb potential10.1063/1.1564060 ↗
38. Erratum: ‘hybrid functionals based on a screened Coulomb potential’ [J. Chem. Phys. 118, 8207 (2003)]10.1063/1.2204597 ↗
39. Efficient hybrid density functional calculations in solids: Assessment of the Heyd–Scuseria–Ernzerhof screened Coulomb hybrid functional10.1063/1.1760074 ↗
40. Special points for Brillouin-zone integrations10.1103/physrevb.13.5188 ↗
41. First principles phonon calculations in materials science10.1016/j.scriptamat.2015.07.021 ↗
42. First principles study of oxygen vacancy defects in tantalum pentoxide10.1063/1.1615700 ↗
43. A proposed structure for annealed anodic oxide films of tantalum10.1139/v62-298 ↗
44. Electrical conductivity in oxygen-deficient phases of tantalum pentoxide from first-principles calculations10.1063/1.4829900 ↗
45. Phase separation in amorphous tantalum oxide from first principles10.1063/5.0011390 ↗