Europium-substituted cerium iron garnet thin films for silicon-integrated nonreciprocal photonic device applications
Source abstract
Abstract
Optical nonreciprocal devices are key components in photonic integrated circuits. Cerium-doped yttrium iron garnet (Ce:YIG) has been widely studied for nonreciprocal photonic devices in the telecommunication wavelength range. Despite recent progress, challenges arise when depositing polycrystalline Ce:YIG thin films on non-garnet substrates, resulting in weaker magneto-optical performance due to Ce4+ segregation. In this paper, we report enhanced Faraday rotation (FR) and figure of merit (FoM) in Ce:EuIG films deposited on silicon. We demonstrate a high Ce3+ concentration of 81.36%, FR of −3225 deg/cm, and elevated FoM of 33.1 deg/dB in silicon-integrated polycrystalline Ce:EuIG thin films by utilizing a two-step growth process involving magnetron sputtering and rapid thermal annealing. These results highlight the promising potential of Ce:EuIG for nonreciprocal photonic devices.
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Research context
OpenAlex topics: Magneto-Optical Properties and Applications · Photonic and Optical Devices · Photonic Crystals and Applications
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
Affiliations
National Engineering Research Centre of Electromagnetic Radiation Control Materials, University of Electronic Science and Technology of China 1 , Chengdu 610054,
Key Laboratory of Multi-spectral Absorbing Materials and Structures of Ministry of Education, University of Electronic Science and Technology of China 2 , Chengdu 610054,
Funding
National Natural Science Foundation of China · Science and Technology Department of Sichuan Province
References (43)
Show source-provided references
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