Electrically active defects in Ta-doped β-Ga2O3 grown using the optical floating zone method
Source abstract
Abstract
Deep-level defects in Ta-doped β-Ga2O3 single crystals grown using the optical floating zone method are investigated. Deep-level transient spectroscopy (DLTS) in conjunction with Laplace-DLTS (L-DLTS) and photoluminescence (PL) has been applied to (100) oriented β-Ga2O3:Ta bulk crystals. The temperature dependence of the bias capacitance of diodes indicates no significant sign of carrier freeze-out down to 20 K. This confirms the predicted shallow donor behavior of Ta impurity atoms in β-Ga2O3 samples with a carrier concentration of (1.0–1.2) × 1018 cm−3. DLTS and L-DLTS analysis show six traps with activation energies of electron emission of 0.28 (Es), 0.46 (E9), 0.52 (E1), 0.69 (E2a), 0.75 (E2b), and 0.97 (E3) eV, with trap concentrations in the range of 1015–1017 cm−3. In addition, temperature-dependent PL has been used to study the broad luminescence bands with their maxima at 3.10 and 3.40 eV. Subsequent Arrhenius analysis extracted activation energy values (EA of 20 ± 1 and 79 ± 4 meV for quenching of the PL peaks at 3.10 and 3.40 eV, respectively.
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Research context
OpenAlex topics: Ga2O3 and related materials · Advanced Photocatalysis Techniques · ZnO doping and properties
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
Affiliations
Photon Science Institute and Department of Electrical and Electronic Engineering, The University of Manchester 1 , Manchester M13 9PL,
Crystal Growth Centre, Anna University 2 , Chennai 600025,
Center for Device Thermography and Reliability (CDTR), HH Wills Physics Laboratory, University of Bristol 3 , Bristol BS8 1TL,
Funding
Engineering and Physical Sciences Research Council · UKRI Innovation and Knowledge Center · University Grants Commission · Commonwealth Scholarship Commission · Royal Academy of Engineering
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