Interface-induced transverse resistivity anomaly in AgNbO3/SrRuO3 heterostructures
Source abstract
Abstract
The transverse resistivity anomaly with a hump feature, associated with topological magnetic textures, is of paramount importance for the applications of next-generation chiral spintronic devices. However, the origin of the hump feature still remains debated due to the complicated mechanism, not merely assigned to the intrinsic topological Hall effect (THE). In this work, we observe the apparent transverse resistivity hump characteristic superimposed on the Hall signals in AgNbO3/SrRuO3 (ANO/SRO) heterostructures. The intrinsic THE is ruled out by minor-loop and current density measurements. Combining the microscopic characterization and the two-channel anomalous Hall effect fitting, the hump feature is unambiguously attributed to the synergetic contribution from the SRO layer and the interfacial intermixing thin layer of ANO and SRO.
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Research context
OpenAlex topics: Magnetic properties of thin films · Multiferroics and related materials · Advanced Condensed Matter Physics
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
Affiliations
Jiangsu Provincial Key Laboratory of Advanced Photonic and Electronic Materials, State Key Laboratory of Spintronics Devices and Technologies, School of Electronic Science and Engineering, and Collaborative Innovation Center of Advanced Microstructures, Nanjing University 1 , Nanjing 210093, China
College of Engineering and Applied Sciences, Nanjing University 2 , Nanjing 210093, China
School of Materials Science and Engineering, Anhui University of Technology 3 , Ma’anshan 243002, China
Funding
National Key Research and Development Program of China · National Natural Science Foundation of China
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