Electrical control of 180° domain walls in an antiferromagnet
Source abstract
Abstract
We demonstrate the reversible current-induced motion of 180° antiferromagnetic domain walls in a CuMnAs device. By controlling the magnitude and direction of the current pulse, the position of a domain wall can be switched between three distinct pinning sites. The domain wall motion is attributed to a field-like spin–orbit torque that induces the same sense of rotation on each magnetic sublattice, owing to the crystal symmetry of CuMnAs. Domain wall motion is observed for current densities down to ≈2.5×1010 A/m2 at room temperature.
Source: crossref · Quality: baseline
Research context
OpenAlex topics: Magnetic properties of thin films · Magneto-Optical Properties and Applications · Physics of Superconductivity and Magnetism
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
Affiliations
School of Physics and Astronomy, University of Nottingham 1 , Nottingham NG7 2RD, United Kingdom
Diamond Light Source 2 , Chilton OX11 0DE, United Kingdom
Johannes Gutenberg Universität Mainz, Institut für Physik 3 , Staudingerweg 7, 55128 Mainz, Germany
Institute of Physics, Czech Academy of Sciences 4 , Praha 6, 162 00 Prague, Czech Republic
Funding
EU FET Open RIA · Engineering and Physical Sciences Research Council
References (41)
Show source-provided references
1. Antiferromagnetic spintronics10.1038/nnano.2016.18 ↗
2. High antiferromagnetic domain wall velocity induced by Néel spin-orbit torques10.1103/physrevlett.117.017202 ↗
3. Robust picosecond writing of a layered antiferromagnet by staggered spin-orbit fields10.1103/physrevb.94.014439 ↗
4. Relativistic Néel-order fields induced by electrical current in antiferromagnets10.1103/physrevlett.113.157201 ↗
5. Spin transport and spin torque in antiferromagnetic devices10.1038/s41567-018-0062-7 ↗
6. Electrical control of antiferromagnets for the next generation of computing technology10.1063/5.0013917 ↗
7. Electrical switching of an antiferromagnet10.1126/science.aab1031 ↗
8. Antiferromagnetic CuMnAs multi-level memory cell with microelectronic compatibility10.1038/ncomms15434 ↗
9. Terahertz electrical writing speed in an antiferromagnetic memory10.1126/sciadv.aar3566 ↗
10. Writing and reading antiferromagnetic Mn2Au by Néel spin-orbit torques and large anisotropic magnetoresistance10.1038/s41467-017-02780-x ↗
11. Imaging of current induced Néel vector switching in antiferromagnetic Mn2Au10.1103/physrevb.99.140409 ↗
12. Strong orientation-dependent spin-orbit torque in thin films of the antiferromagnet Mn2Au10.1103/physrevapplied.9.054028 ↗
13. From fieldlike torque to antidamping torque in antiferromagnetic Mn2Au10.1103/physrevapplied.11.054030 ↗
14. Electrical switching in a magnetically intercalated transition metal dichalcogenide10.1038/s41563-019-0518-x ↗
15. Antidamping-torque-induced switching in biaxial antiferromagnetic insulators10.1103/physrevlett.120.207204 ↗
16. Spin torque control of antiferromagnetic moments in NiO10.1038/s41598-018-32508-w ↗
17. Mechanism of Néel order switching in antiferromagnetic thin films revealed by magnetotransport and direct imaging10.1103/physrevlett.123.177201 ↗
18. Quantitative study on current-induced effect in an antiferromagnet insulator/Pt bilayer film10.1103/physrevlett.123.247206 ↗
19. Electrical switching of tristate antiferromagnetic Néel order in α-Fe2O3 epitaxial films10.1103/physrevlett.124.027202 ↗
20. Concurrent magneto-optical imaging and magneto-transport readout of electrical switching of insulating antiferromagnetic thin films10.1063/5.0011852 ↗
21. Indirect control of antiferromagnetic domain walls with spin current10.1103/physrevlett.106.067204 ↗
22. Propulsion of a domain wall in an antiferromagnet by magnons10.1103/physrevb.90.104406 ↗
23. Antiferromagnetic domain wall motion induced by spin waves10.1103/physrevlett.112.147204 ↗
24. Driving a magnetized domain wall in an antiferromagnet by magnons10.1063/5.0006038 ↗
25. Manipulating antiferromagnets with magnetic fields: Ratchet motion of multiple domain walls induced by asymmetric field pulses10.1063/1.4964272 ↗
26. Driving chiral domain walls in antiferromagnets using rotating magnetic fields10.1103/physrevb.97.184418 ↗
27. Microwave fields driven domain wall motions in antiferromagnetic nanowires10.1088/1367-2630/aac68e ↗
28. Rotating magnetic field driven antiferromagnetic domain wall motion: Role of Dzyaloshinskii-Moriya interaction10.1016/j.jmmm.2019.166051 ↗
29. Ultralow-loss domain wall motion driven by a magnetocrystalline anisotropy gradient in an antiferromagnetic nanowire10.1103/physrevresearch.2.013166 ↗
30. Inertia-free thermally driven domain-wall motion in antiferromagnets10.1103/physrevlett.117.107201 ↗
31. Brownian motion and entropic torque driven motion of domain walls in antiferromagnets10.1103/physrevb.97.054308 ↗
32. Antiferromagnetic domain wall motion driven by spin-orbit torques10.1103/physrevlett.117.087203 ↗
33. Staggered field driven domain walls motion in antiferromagnetic heterojunctions10.1063/1.5042567 ↗
34. Current polarity-dependent manipulation of antiferromagnetic domains10.1038/s41565-018-0079-1 ↗
35. Domain-wall velocities of up to 750 m s−1 driven by exchange-coupling torque in synthetic antiferromagnets10.1038/nnano.2014.324 ↗
36. Antiferromagnetic domain wall creep driven by magnetoelectric effect10.1063/1.5053928 ↗
37. Direct imaging of current-induced antiferromagnetic switching revealing a pure thermomagnetoelastic switching mechanism in NiO10.1021/acs.nanolett.0c03367 ↗
38. Hidden spin polarization in inversion-symmetric bulk crystals10.1038/nphys2933 ↗
39. Magnetic domain-wall racetrack memory10.1126/science.1145799 ↗
40. Memory on the racetrack10.1038/nnano.2015.41 ↗
41. Current-driven magnetic domain-wall logic10.1038/s41586-020-2061-y ↗