journal article·2024-04-01Open access

Enhanced interlayer Dzyaloshinskii–Moriya interaction and field-free switching in magnetic trilayers with orthogonal magnetization

Xupeng Zhao, Hongli Sun, Rongkun Han, Hongrui Qin, Lianjun Wen, Hailong Wang, Dahai Wei, Jianhua Zhao

APL Materials· Volume 12· Issue 4

Abstract

The indirect interlayer exchange coupling (IEC) between two magnetic layers holds significant importance in the field of spintronics and has been widely used in the construction of synthetic antiferromagnets. Recently, the interlayer Dzyaloshinskii–Moriya interaction (DMI), antisymmetric counterpart of IEC, has been discovered in magnetic trilayers with a heavy-metal spacer. In this study, we present an investigation on antisymmetric and symmetric counterparts of IEC in D022-Mn3Ga/Pt/Co trilayers with orthogonal magnetization. Due to the strong interlayer DMI across the entire multilayer, the symmetry of magnetic reversal process was broken, leading to an enhanced chiral exchange-bias field of 42.7 Oe in the Co layer. In addition, field-free spin–orbit torque (SOT) switching of D022-Mn3Ga layer has been realized in Hall bar devices. In-plane field dependence analysis of the SOT switching behavior reveals that the symmetric counterpart of IEC exhibits antiferromagnetic characteristics within the spacer thickness range of 2 nm ≤ tPt ≤5 nm. Moreover, the magnitude of both antisymmetric and symmetric counterparts of IEC exhibits an exponential decreasing trend with increasing tPt. These findings hold significant implications for the design and manipulation of three-dimensional chiral spin textures in the future spintronic devices.
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Research context

OpenAlex topics: Magnetic properties of thin films · Magnetic and transport properties of perovskites and related materials · Multiferroics and related materials

SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.

Affiliations

International School of Microelectronics, Dongguan University of Technology 1 , Dongguan 523808, China

State Key Laboratory of Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences 2 , P. O. Box 912, Beijing 100083, China

Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences 3 , Beijing 100190, China

Funding

National Natural Science Foundation of China · Strategic Priority Research Program of the Chinese Academy of Sciences · Guangdong Provincial Key Laboratory Project

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