Overcoming the compensation of acceptors in GaN:Mg by defect complex formation
Source abstract
Abstract
In GaN:Mg, the MgGa acceptor is compensated extensively by the formation of nitrogen vacancies (VN) and Mg interstitials (Mgi). However, we show that such compensation can be overcome by forming two kinds of Mg-rich complexes: one that contains VN and the other that contains only MgGa and Mgi. Such complexing not only neutralizes VN and Mgi but also forms better complex acceptors that have lower formation energies and smaller hole localization energies than isolated MgGa. Our results help explain the different doping behaviors in samples grown by different methods.
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Research context
OpenAlex topics: GaN-based semiconductor devices and materials · Semiconductor materials and devices · Metal and Thin Film Mechanics
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
Affiliations
International School of Microelectronics, Dongguan University of Technology 1 , 523808 Dongguan, People’s Republic of China
Department of Chemistry, Kathleen Lonsdale Materials Chemistry, University College London 2 , WC1 HOAJ London, United Kingdom
School of Engineering, London South Bank University 3 , SE1 0AA London, United Kingdom
School of Chemistry, Cardiff University 4 , Park Place, CF10 1AT Cardiff, United Kingdom
Scientific Computing Department, STFC Daresbury Laboratory 5 , Daresbury, Warrington WA4 4AD, United Kingdom
Funding
Engineering and Physical Sciences Research Council · Basic and Applied Basic Research Foundation of Guangdong Province
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