Noise-assisted transport mechanism analysis and synaptic characteristics in ZrOX/HfAlOX-based memristor for neuromorphic systems
Source abstract
Abstract
In this work, we compare the resistive switching characteristics between Ti/ZrOX/TiN and Ti/ZrOX/HfAlOX/TiN. The bilayer structure of the ZrOX-based device enables power consumption reduction owing to a lower forming voltage and compliance current. Moreover, the on/off ratio of the Ti/ZrOX/HfAlOX/TiN device (>102) is higher than that of the Ti/ZrOX/TiN device (>10). We use the 1/f noise measurement technique to clarify the transport mechanism of the Ti/ZrOX/HfAlOX/TiN device; consequently, ohmic conduction and Schottky emission are confirmed in the low- and high-resistance states, respectively. In addition, the multilevel cell, potentiation, and depression characteristics of the Ti/ZrOX/HfOX/TiN device are considered to assess its suitability as a neuromorphic device. Accordingly, a modified National Institute of Standards and Technology database simulation is conducted using Python to test the pattern recognition accuracy.
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Research context
OpenAlex topics: Advanced Memory and Neural Computing · Ferroelectric and Negative Capacitance Devices · Neuroscience and Neural Engineering
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
Affiliations
Division of Electronics and Electrical Engineering, Dongguk University 1 , Seoul 04620, South Korea
School of Electrical and Electronics Engineering, Chung-Ang University 2 , Seoul 06974, Republic of Korea
Department of Electrical and Computer Engineering and Inter-University Semiconductor Research Center, Seoul National University 3 , Seoul 08826, Republic of Korea
Funding
National Research Foundation of Korea
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