Impact of the oxidation temperature on the density of single-photon sources formed at SiO2/SiC interface
Source abstract
Abstract
The impact of oxidation temperature on the formation of single photon-emitting defects located at the silicon dioxide (SiO2)/silicon carbide (SiC) interface was investigated. Thermal oxidation was performed in the temperature range between 900 and 1300 °C. After oxidation, two different cooling processes—cooling down in N2 or O2 ambient—were adopted. Single photon emission was confirmed with second-order correlation function measurements. For the samples cooled in an N2 ambient, the density of interface single photon sources (SPSs) increased with decreasing oxidation temperature with a density that could be controlled over the 105 to 108 cm−2 range. For the O2 cooled samples, on the other hand, many interface SPSs were formed irrespective of the oxidation temperature. This is attributed to the low-temperature oxidation during the cooling process after oxidation.
Source: crossref · Quality: baseline
Research context
OpenAlex topics: Diamond and Carbon-based Materials Research · Semiconductor materials and devices · Silicon Nanostructures and Photoluminescence
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
Affiliations
Department of Electronic Science and Engineering, Kyoto University 1 , Kyoto 615-8510, Japan
Chitose Institute of Science and Technology 2 , 758-65 Bibi, Chitose 066-8655, Japan
Funding
Japan Society for the Promotion of Science · Quantum Leap Flagship Program · Precursory Research for Embryonic Science and Technology
References (29)
Show source-provided references
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