Low temperature photoresponse of monolayer tungsten disulphide
Source abstract
Abstract
High photoresponse can be achieved in monolayers of transition metal dichalcogenides. However, the response times are inconveniently limited by defects. Here, we report low temperature photoresponse of monolayer tungsten disulphide prepared by exfoliation and chemical vapour deposition (CVD) method. The exfoliated device exhibits n-type behaviour; while the CVD device exhibits intrinsic behaviour. In off state, the CVD device has four times larger ratio of photoresponse for laser on/off and photoresponse decay–rise times are 0.1 s (limited by our setup), while the exfoliated device has few seconds. These findings are discussed in terms of charge trapping and localization.
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Research context
OpenAlex topics: 2D Materials and Applications · Perovskite Materials and Applications · Graphene research and applications
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
Affiliations
Division of Physics and Applied Physics, School of Physical and Mathematical Sciences, Nanyang Technological University 1 , Singapore, 637371
Faculty of Science, National University of Singapore 2 Department of Physics, , Singapore, 117542
Graphene Research Centre, National University of Singapore 3 , Singapore, 117546
Funding
Ministery of Education · National Research Foundation · Agency for Science, Technology and Research
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