The Bain library: A Cu-Au buffer template for a continuous variation of lattice parameters in epitaxial films
Source abstract
Abstract
Smallest variations of the lattice parameter result in significant changes in material properties. Whereas in bulk, lattice parameters can only be changed by composition or temperature, coherent epitaxial growth of thin films on single crystals allows adjusting the lattice parameters independently. Up to now only discrete values were accessible by using different buffer or substrate materials. We realize a lateral variation of in-plane lattice parameters using combinatorial film deposition of epitaxial Cu-Au on a 4-in. Si wafer. This template gives the possibility to adjust the in-plane lattice parameter over a wide range from 0.365 nm up to 0.382 nm.
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Research context
OpenAlex topics: Magnetic properties of thin films · Electronic and Structural Properties of Oxides · Surface and Thin Film Phenomena
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
Affiliations
Ruhr-University Bochum 1 , Faculty of Mechanical Engineering, Institute for Materials, 44801 Bochum, Germany
IFW Dresden 2 , P.O. Box 270116, 01171 Dresden, Germany
Dresden University of Technology 3 , Institute for Materials Science, 01062 Dresden, Germany
Technische Universität Chemnitz 4 , Faculty of Natural Science, Institute of Physics, 09107 Chemnitz, Germany
Helmholtz-Zentrum Dresden-Rossendorf 5 , P.O. Box 510119, 01314 Dresden, Germany
Funding
DFG
References (17)
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