Transfer-free, lithography-free, and micrometer-precision patterning of CVD graphene on SiO2 toward all-carbon electronics
Source abstract
Abstract
A method of producing large area continuous graphene directly on SiO2 by chemical vapor deposition is systematically developed. Cu thin film catalysts are sputtered onto the SiO2 and pre-patterned. During graphene deposition, high temperature induces evaporation and balling of the Cu, and the graphene “lands onto” SiO2. Due to the high heating and growth rate, continuous graphene is largely completed before the Cu evaporation and balling. 60 nm is identified as the optimal thickness of the Cu for a successful graphene growth and μm-large feature size in the graphene. An all-carbon device is demonstrated based on this technique.
Source: crossref · Quality: baseline
Research context
OpenAlex topics: Graphene research and applications · Diamond and Carbon-based Materials Research · Carbon Nanotubes in Composites
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
Affiliations
Key Laboratory of Optoelectronics Technology, Beijing University of Technology, Ministry of Education 1 , Beijing 100124, China
Mikroteknologi och Nanovetenskap, Chalmers Tekniska Högskola AB 2 , Göteborg 41296, Sweden
Funding
National Key R&D Program of China · Swedish Foundation for International Cooperation in Research and Higher Education · National Natural Science Foundation of China · Natural Science Foundation of Beijing Municipality
References (23)
Show source-provided references
1. Science · 2004 · 306 · 66610.1126/science.1102896 ↗
2. Nat. Mater. · 2007 · 6 · 18310.1038/nmat1849 ↗
3. Rev. Mod. Phys. · 2009 · 81 · 10910.1103/revmodphys.81.109 ↗
4. Science · 2006 · 312 · 119110.1126/science.1125925 ↗
5. Nano Lett. · 2009 · 9 · 403110.1021/nl902200b ↗
6. Nat. Nanotechnol. · 2010 · 5 · 57410.1038/nnano.2010.132 ↗
7. Science · 2009 · 324 · 131210.1126/science.1171245 ↗
8. Synth. Met. · 2016 · 216 · 9310.1016/j.synthmet.2015.09.011 ↗
9. Adv. Mater. Interfaces · 2016 · 3 · 150049210.1002/admi.201500492 ↗
10. Appl. Phys. Lett. · 2013 · 102 · 02210110.1063/1.4775583 ↗
11. Nat. Commun. · 2012 · 3 · 69910.1038/ncomms1702 ↗
12. Appl. Phys. Lett. · 2013 · 103 · 05210310.1063/1.4816246 ↗
13. J. Am. Chem. Soc. · 2011 · 133 · 1754810.1021/ja2063633 ↗
14. Appl. Phys. Lett. · 2011 · 98 · 25210710.1063/1.3602921 ↗
15. ACS Nano · 2012 · 6 · 850810.1021/nn302290z ↗
16. Adv. Mater. · 2011 · 23 · 439210.1002/adma.201102526 ↗
17. ACS Nano · 2011 · 5 · 824110.1021/nn202923y ↗
18. Nano Lett. · 2011 · 11 · 361210.1021/nl201362n ↗
19. Nano Lett. · 2010 · 10 · 154210.1021/nl9037714 ↗
20. Nature · 2014 · 516 · 22710.1038/nature14015 ↗
21. Phys. Rev. B · 2010 · 82 · 12542910.1103/physrevb.82.125429 ↗
22. Appl. Phys. Lett. · 2012 · 100 · 02210210.1063/1.3675632 ↗
23. ACS Nano · 2013 · 8 · 657510.1021/nn402847w ↗