Response to “Comment on ‘Phase transformation in MOCVD growth of (AlxGa1−x)2O3 thin films’” [APL Mater. 8, 089101 (2020)]

A F M Anhar Uddin Bhuiyan; Zixuan Feng; Jared M. Johnson; Hsien-Lien Huang; Jith Sarker; Menglin Zhu; Md Rezaul Karim; Baishakhi Mazumder; Jinwoo Hwang; Hongping Zhao

doi:10.1063/5.0014806

journal article·2020-08-01Open access

Response to “Comment on ‘Phase transformation in MOCVD growth of (AlxGa1−x)2O3 thin films’” [APL Mater. 8, 089101 (2020)]

A F M Anhar Uddin Bhuiyan, Zixuan Feng, Jared M. Johnson, Hsien-Lien Huang, Jith Sarker, Menglin Zhu, Md Rezaul Karim, Baishakhi Mazumder, Jinwoo Hwang, Hongping Zhao

APL Materials· Volume 8· Issue 8

Publisher page Open full text

Source abstract

Abstract

First Page

Only a short abstract or summary was supplied by the source.

Source: openalex_inverted_index · Quality: short

Research context

OpenAlex topics: Ga2O3 and related materials · ZnO doping and properties · Semiconductor materials and devices

SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.

Affiliations

Department of Electrical and Computer Engineering, The Ohio State University 1 , Columbus, Ohio 43210, USA

Department of Materials Science and Engineering, The Ohio State University 2 , Columbus, Ohio 43210, USA

Department of Materials Design and Innovation, University at Buffalo 3 , Buffalo, New York 14260, USA

References (4)

Show source-provided references

1. APL Mater. · 2020 · 8 · 03110410.1063/1.5140345 ↗

2. J. Cryst. Growth · 2014 · 401 · 66510.1016/j.jcrysgro.2013.11.056 ↗

3. Appl. Phys. Lett. · 2018 · 112 · 24210110.1063/1.5036991 ↗

4. APL Mater. · 2020 · 8 · 08910110.1063/5.0012940 ↗