Fabrication of atomically abrupt interfaces of single-phase TiH2 and Al2O3
Source abstract
Abstract
We report the fabrication of atomically abrupt interfaces of titanium dihydride (δ-TiH2) films and α-Al2O3(001) substrates. With the assistance from reactive hydrogen in plasma, single-phase δ-TiH2 epitaxial thin films were grown on α-Al2O3(001) substrates using the reactive magnetron sputtering technique. Scanning transmission electron microscopy measurements revealed an atomically abrupt interface at the δ-TiH2(111) film and Al2O3(001) substrate. These results indicate that the reactive magnetron sputtering has great potential to deposit various epitaxial thin films of hydrides restricted by the hydrogenation limit. The fabrication of high-quality hydride epitaxial thin films with atomically controlled interfaces paves the way for future hydride electronics.
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Research context
OpenAlex topics: Hydrogen Storage and Materials · Nuclear Materials and Properties · Fusion materials and technologies
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
Affiliations
School of Materials and Chemical Technology, Tokyo Institute of Technology 1 , 152-8552 Tokyo, Japan
Advanced Institute for Materials Research, Tohoku University 2 , 980-8577 Sendai, Japan
Institute for Materials Research, Tohoku University 3 , 980-8577 Sendai, Japan
References (15)
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