Engineering antiphase boundaries in epitaxial SrTiO3 to achieve forming free memristive devices
Source abstract
Abstract
We here present a method to engineer Ruddlesden-Popper-type antiphase boundaries in stoichiometric homoepitaxial SrTiO3 thin films. This is achieved by using a substrate with an intentionally high miscut, which stabilizes the growth of additional SrO at the bottom interface. We prove the success of this strategy utilizing transmission electron microscopy. We find that these antiphase boundaries significantly influence the resistive switching properties. In particular, devices based on SrTiO3 thin films with intentionally induced antiphase boundaries do not require a forming step, which is ascribed to the existence of preformed filaments.
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Research context
OpenAlex topics: Advanced Memory and Neural Computing · Electronic and Structural Properties of Oxides · Ferroelectric and Negative Capacitance Devices
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
Affiliations
PGI-7, Forschungszentrum Jülich GmbH 1 , 52425 Jülich, Germany
JARA-FIT, Forschungszentrum Jülich GmbH 2 , 52425 Jülich, Germany
ER-C 2, Forschungszentrum Jülich GmbH 3 , 52425 Jülich, Germany
GFE, RWTH Aachen University 4 , 52074 Aachen, Germany
ER-C 1, Forschungszentrum Jülich GmbH 5 , 52425 Jülich, Germany
PGI-5, Forschungszentrum Jülich GmbH 6 , 52425 Jülich, Germany
Funding
Deutsche Forschungsgemeinschaft · Helmholtz Association
References (48)
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