High-temperature-grown buffer layer boosts electron mobility in epitaxial La-doped BaSnO3/SrZrO3 heterostructures
Source abstract
Abstract
By inserting a SrZrO3 buffer layer between the film and the substrate, we demonstrate a significant reduction of the threading dislocation density with an associated improvement of the electron mobility in La:BaSnO3 films. A room temperature mobility of 140 cm2 V−1s−1 is achieved for 25-nm-thick films without any postgrowth treatment. The density of threading dislocations is only 4.9 × 109 cm−2 for buffered films prepared on (110) TbScO3 substrates by pulsed laser deposition.
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Research context
OpenAlex topics: Electronic and Structural Properties of Oxides · Ferroelectric and Piezoelectric Materials · Semiconductor materials and devices
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
Affiliations
Max Planck Institute for Solid State Research 1 , Heisenbergstr. 1, 70569 Stuttgart, Germany
Department of Physics, University of Johannesburg 2 , P.O. Box 524 Auckland Park 2006, Johannesburg, South Africa
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