Direct transition of a HfGeTe4 ternary transition-metal chalcogenide monolayer with a zigzag van der Waals gap
Source abstract
Abstract
The ternary transition-metal chalcogenide HfGeTe4 is found to have a direct band gap of around 1.3 eV in its monolayer form, while it has an indirect band gap of about a half of that value in the bulk form. In contrast to the two-dimensional flat layers seen in most van der Waals solids, HfGeTe4 has zigzag shaped layers. The zigzag shape can allow a higher inter-layer cohesive energy and thus lead to better adhesion properties. The discovery of this novel transition metal ternary chalcogenide will open new avenue of materials exploration for future ultrathin electronics applications.
Source: openalex_inverted_index · Quality: baseline
Research context
OpenAlex topics: 2D Materials and Applications · Chalcogenide Semiconductor Thin Films · Quantum Dots Synthesis And Properties
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
Affiliations
Nanoelectronics Research Institute, National Institute of Advanced Industrial Science and Technology, Tsukuba Central 5, Higashi 1-1-1, Tsukuba 305-8565, Japan
Department of Engineering, Cambridge University, 9 J J Thomson Avenue, Cambridge CB3 0FA, United Kingdom
Funding
Engineering and Physical Sciences Research Council · Japan Society for the Promotion of Science
References (37)
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